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One-dimensional γ-Al2O3 growth from the oxidation of NiAl
Corrosion Science ( IF 7.4 ) Pub Date : 2023-03-02 , DOI: 10.1016/j.corsci.2023.111069
Dingding Zhu , Xinli Wang , Peng Jia , Canying Cai , Jianyu Huang , Guangwen Zhou

We report an oxide nanowire growth phenomenon that morphologically resembles the vapor-liquid-solid process but with a fundamentally different mechanism. This is demonstrated with the high-temperature NiAl oxidation that results in the unidirectional γ-Al2O3 growth with a NiO nanoparticle at the nanowire tip. The NiO nanoparticle surface serves as the active site for dissociative O2 adsorption that produces an inward flux of atomic oxygen toward the γ-Al2O3/NiAl interface for γ-Al2O3 growth by reacting with bottom-up diffusing Al3+ cations. The nanowire lengthening follows the parabolic kinetics with the upward lattice diffusion of Al3+ cations in the γ-Al2O3 nanowires as the rate-limiting factor.



中文翻译:

NiAl 氧化生长的一维 γ-Al2O3

我们报告了一种氧化物纳米线生长现象,其形态类似于气-液-固过程,但具有根本不同的机制。这通过高温 NiAl 氧化得到证明,该氧化导致单向 γ-Al 2 O 3生长,纳米线尖端处有 NiO 纳米颗粒。NiO 纳米颗粒表面用作离​​解 O 2吸附的活性位点,通过与自下而上扩散的 Al 3反应产生朝向 γ-Al 2 O 3 /NiAl 界面的原子氧向内通量,用于 γ-Al 2 O 3生长+阳离子。纳米线的延长遵循抛物线动力学,其中γ-Al 2 O 3纳米线中Al 3+阳离子的向上晶格扩散作为限速因子。

更新日期:2023-03-02
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