Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for practical applications of dielectric capacitors. Herein, we propose a heterovalent-doping-enabled atom-displacement fluctuation strategy for the design of low-atom-displacements regions in the antiferroelectric matrix to achieve the increase in breakdown strength and enhancement of the energy-storage density for AgNbO₃-based multilayer capacitors. An ultrahigh breakdown strength ~1450 kV·cm⁻¹ is realized in the Sm_0.05Ag_0.85Nb_0.7Ta_0.3O₃ multilayer capacitors, especially with an ultrahigh U_rec ~14 J·cm⁻³, excellent η ~ 85% and P_D,max ~ 102.84 MW·cm⁻³, manifesting a breakthrough in the comprehensive energy storage performance for lead-free antiferroelectric capacitors. This work offers a good paradigm for improving the energy storage properties of antiferroelectric multilayer capacitors to meet the demanding requirements of advanced energy storage applications.

要求小型化和集成化的下一代先进高/脉冲功率电容器非常需要具有高储能性能的介电电容器。然而，低击穿强度导致的低能量存储密度一直是介质电容器实际应用的主要挑战。_{在此，我们提出了一种支持异价掺杂的原子位移波动策略，用于设计反铁电基体中的低原子位移区域，以实现 AgNbO 3}基多层膜的击穿强度增加和储能密度提高电容器。在 Sm _0.05 Ag _0.85 Nb中实现了超高击穿强度~1450 kV·cm ^-1_0.7 Ta _0.3 O ₃多层电容器，尤其是超高U _rec ~14 J·cm ⁻³，优异的η ~ 85% 和P _D,max ~ 102.84 MW·cm ⁻³，实现了储能综合性能的突破无铅反铁电电容器。这项工作为提高反铁电多层电容器的储能性能以满足高级储能应用的苛刻要求提供了一个很好的范例。