Metal-halide perovskite light-emitting diodes (PeLEDs) have attracted great interest because of their tunable emission wavelength, narrow emission bandwidth and high external quantum efficiency. However, PeLEDs face two critical issues that limit their potential applications: short device lifetime due to ion migration and low brightness due to severe Auger recombination. Here we demonstrate that both issues can be mitigated by in situ solution-grown perovskite single crystals (SCs). By minimizing the trap density using mixed cations and adding excess ammonium halides and polyvidone to the precursor, the external photoluminescence quantum yield (PLQY) of the SCs is enhanced to 28.3%, corresponding to an internal PLQY of 89.4%. Benefitting from the suppressed Auger recombination in SCs, SC-PeLEDs with a thickness of 1.5 µm exhibit a high luminance of 86,000 cd m⁻² and a peak external quantum efficiency of 11.2%. Thanks to suppressed ion migration, the extrapolated T₅₀ lifetime for SC-PeLEDs reaches a value of 12,500 h at an initial luminance of 100 cd m⁻². Our results show that SC growth represents a viable route to increase the lifetime of PeLEDs for practical applications.

金属卤化物钙钛矿发光二极管 (PeLED) 因其发射波长可调、发射带宽窄和外量子效率高而备受关注。然而，PeLED 面临两个限制其潜在应用的关键问题：离子迁移导致的器件寿命短和严重的俄歇复合导致的低亮度。在这里，我们证明这两个问题都可以通过原位溶液生长的钙钛矿单晶 (SC) 来缓解。通过使用混合阳离子最小化陷阱密度并向前体添加过量的卤化铵和聚维酮，SC 的外部光致发光量子产率 (PLQY) 提高到 28.3%，对应于 89.4% 的内部 PLQY。受益于 SC 中受抑制的俄歇复合，厚度为 1 的 SC-PeLED。^-2和 11.2% 的峰值外部量子效率。由于离子迁移受到抑制，SC-PeLED 的外推T _{50寿命在 100 cd m} ^-2的初始亮度下达到 12,500 小时的值。我们的结果表明，SC 增长代表了在实际应用中增加 PeLED 寿命的可行途径。