Record-High Electron Mobility Exceeding 16 cm2 V−1 s−1 in Bisisoindigo-Based Polymer Semiconductor with a Fully Locked Conjugated Backbone,Advanced Materials

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Record-High Electron Mobility Exceeding 16 cm2 V−1 s−1 in Bisisoindigo-Based Polymer Semiconductor with a Fully Locked Conjugated Backbone
Advanced Materials ( IF 27.4 ) Pub Date : 2023-02-27 , DOI: 10.1002/adma.202300145
Weifeng Zhang _{1,

2} , Keli Shi ₃ , Jing Lai ₃ , Yankai Zhou _{1,

2} , Xuyang Wei _{1,

2} , Qian Che _{1,

2} , Jinbei Wei ₁ , Liping Wang ₄ , Gui Yu _{1,

2}

Affiliation

Polymer semiconductors with mobilities exceeding 10 cm² V⁻¹ s⁻¹, especially ambipolar and n-type polymer semiconductors, are still rare, although they are of great importance for fabricating polymer field-effect transistors (PFETs) toward commercial high-grade electronics. Herein, two novel donor−acceptor copolymers, PNFFN-DTE and PNFFN-FDTE, are designed and synthesized based on the electron-deficient bisisoindigo (NFFN) and electron-rich dithienylethylenes (DTE or FDTE). The copolymer PNFFN-DTE, containing NFFN and DTE, possesses a partially locked polymeric conjugated backbone, whereas PNFFN-FDTE, containing NFFN and FDTE, has a fully locked one. Fluorine atoms in FDTE not only induce the formation of additional CH∙∙∙F hydrogen bonds, but also lower frontier molecular orbitals for PNFFN-FDTE. Both PNFFN-DTE and PNFFN-FDTE form more ordered molecular packing in thin films prepared from a polymer solution in bicomponent solvent containing 1,2-dichlorobenzene (DCB) and 1-chloronaphthalene (with volume ratio of 99.2/0.8) than pure DCB. The two copolymers-based flexible PFETs exhibit ambipolar charge-transport properties. Notably, the bicomponent solvent-processed PNFFN-FDTE-based PFETs afford a high electron mobility of 16.67 cm² V⁻¹ s⁻¹, which is the highest electron-transport mobility for PFETs reported so far. The high electron mobility of PNFFN-FDTE is attributed to its fully locked conjugated backbone, dense molecular packing, and much matched LUMO energy level.

中文翻译：

具有完全锁定的共轭主链的基于双异靛蓝的聚合物半导体中超过 16 cm2 V−1 s−1 的创纪录高电子迁移率

迁移率超过 10 cm 的聚合物半导体² V ⁻¹ s ⁻¹，特别是双极和 n 型聚合物半导体，仍然很少见，尽管它们对于制造面向商业高档电子产品的聚合物场效应晶体管 (PFET) 非常重要。在此，基于缺电子双异靛蓝 (NFFN) 和富电子二噻吩乙烯 (DTE 或 FDTE) 设计和合成了两种新型供体-受体共聚物 PNFFN-DTE 和 PNFFN-FDTE。包含 NFFN 和 DTE 的共聚物 PNFFN-DTE 具有部分锁定的聚合物共轭主链，而包含 NFFN 和 FDTE 的 PNFFN-FDTE 具有完全锁定的主链。FDTE 中的氟原子不仅诱导形成额外的 CH∙∙∙F 氢键，而且还诱导 PNFFN-FDTE 的较低边界分子轨道。PNFFN-DTE 和 PNFFN-FDTE 在由含有 1,2-二氯苯 (DCB) 和 1-氯萘（体积比为 99.2/0.8）的双组分溶剂中的聚合物溶液制备的薄膜中形成比纯 DCB 更有序的分子堆积。这两种基于共聚物的柔性 PFET 具有双极性电荷传输特性。值得注意的是，双组分溶剂处理的基于 PNFFN-FDTE 的 PFET 具有 16.67 cm 的高电子迁移率² V ^-1 s ^-1，这是迄今为止报道的 PFET 的最高电子传输迁移率。PNFFN-FDTE 的高电子迁移率归因于其完全锁定的共轭主链、致密的分子堆积和高度匹配的 LUMO 能级。

更新日期：2023-02-27

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