Abstract

Thin GaTe films were grown by molecular beam epitaxy (MBE) on GaAs(001) substrates. X-ray powder diffraction confirmed the coexistence of the h- and m-GaTe phases in all grown layers. A quantitative correlation between the MBE growth conditions and the phase composition of the grown films is established, and the upper limit of the MBE growth temperature for thin GaTe/GaAs(001) films is experimentally determined. New data are presented confirming the defect-related origin of the broad emission line with an energy maximum of ~1.45–1.46 eV, which dominates the low-temperature photoluminescence spectra of the grown GaTe/GaAs(001) layers.

中文翻译：

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混合 h-GaTe/m-GaTe 薄膜在 GaAs(001) 衬底上的分子束外延：结构和光致发光特性

摘要

GaTe 薄膜是通过分子束外延 (MBE) 在 GaAs(001) 衬底上生长的。X 射线粉末衍射证实了h - 和m -GaTe 相在所有生长层中的共存。建立了 MBE 生长条件与生长薄膜的相组成之间的定量相关性，并通过实验确定了薄 GaTe/GaAs(001) 薄膜的 MBE 生长温度上限。提供的新数据证实了宽发射线的缺陷相关起源，其能量最大值为 ~1.45–1.46 eV，它在生长的 GaTe/GaAs(001) 层的低温光致发光光谱中占主导地位。