通过 2D 云母冲压对单层柔性场效应晶体管进行干光刻图案化,Advanced Materials

当前位置： X-MOL 学术 › Adv. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

通过 2D 云母冲压对单层柔性场效应晶体管进行干光刻图案化
Advanced Materials ( IF 27.4 ) Pub Date : 2023-02-25 , DOI: 10.1002/adma.202211600
Deng Zou _{1,

2} , Zhenfei He ₁ , Ming Chen ₃ , Lizhi Yan ₁ , Yifan Guo ₁ , Guoyun Gao ₄ , Can Li ₄ , Yingzhe Piao _{1,

3} , Xing Cheng ₃ , Paddy K L Chan _{1,

2}

Affiliation

基于 2D 单层有机半导体 (OSC) 的有机场效应晶体管 (OFET) 已在各种应用中展现出广阔的前景，例如发光二极管 (LED) 显示驱动器、逻辑电路和可穿戴式心电图 (ECG) 传感器。迄今为止，这类高度结晶的 2D 有机半导体 (OSC) 的制造以溶液剪切为主。由于这些有机活性层只有几个分子层厚，它们与传统热蒸发顶部电极或复杂光刻图案的兼容性非常有限，这也限制了它们的器件密度。这里，开发了电极转移印模和半导体图案印模，以在大面积上制造沟道长度低至 3 µm 的 OFET，而无需使用任何化学品或对有源层造成任何损坏。2D 2,9-二癸基二萘并[2,3-b:2',3'-f]噻吩并[3,2-b]噻吩（C_{通过这种新方法开发的10} -DNTT) 单层 OFET 显示出不错的性能特性，阈值电压 ( V _TH ) 低于 0.5 V，本征迁移率高于 10 cm ² V ⁻¹ s ⁻¹并且亚阈值摆幅 (SS) 更小低于 100 mV dec ⁻¹. 所提出的图案化方法与厚度小于 2 µm 的超柔性聚对二甲苯基板完全可比。通过将通道长度进一步减小至 2 µm 并在 AC/DC 整流电路中使用单层 OFET，在输入电压为 4 V 时测得的截止频率高达 17.3 MHz。新提出的电极转移和图案化印章解决了将电极沉积到 2D 有机单层和半导体图案化上的长期兼容性问题。它为降低制造成本和简化用于更高级电子或生物医学应用的高密度 OFET 的制造工艺开辟了一条新途径。

"点击查看英文标题和摘要"

Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping

Organic field-effect transistors (OFETs) based on 2D monolayer organic semiconductors (OSC) have demonstrated promising potentials for various applications, such as light emitting diode (LED) display drivers, logic circuits, and wearable electrocardiography (ECG) sensors. To date, the fabrications of this class of highly crystallized 2D organic semiconductors (OSC) are dominated by solution shearing. As these organic active layers are only a few molecular layers thick, their compatibilities with conventional thermal evaporated top electrodes or sophisticated photolithography patterning are very limited, which also restricts their device density. Here, an electrode transfer stamp and a semiconductor patterning stamp are developed to fabricate OFETs with channel lengths down to 3 µm over a large area without using any chemicals or causing any damage to the active layer. 2D 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C₁₀-DNTT) monolayer OFETs developed by this new approach shows decent performance properties with a low threshold voltage (V_TH) less than 0.5 V, intrinsic mobility higher than 10 cm² V⁻¹ s⁻¹ and a subthreshold swing (SS) less than 100 mV dec⁻¹. The proposed patterning approach is completely comparable with ultraflexible parylene substrate less than 2 µm thick. By further reducing the channel length down to 2 µm and using the monolayer OFET in an AC/DC rectifying circuit, the measured cutoff frequency is up to 17.3 MHz with an input voltage of 4 V. The newly proposed electrode transfer and patterning stamps have addressed the long-lasting compatibility problem of depositing electrodes onto 2D organic monolayer and the semiconductor patterning. It opens a new path to reduce the fabrication cost and simplify the manufacturing process of high-density OFETs for more advanced electronic or biomedical applications.

更新日期：2023-02-25

点击分享查看原文

点击收藏

公开下载

阅读更多本刊新发论文本刊介绍/投稿指南