One-Pot Synthesis of InP Multishell Quantum Dots for Narrow-Bandwidth Light-Emitting Devices,ACS Applied Nano Materials

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One-Pot Synthesis of InP Multishell Quantum Dots for Narrow-Bandwidth Light-Emitting Devices
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2023-02-22 , DOI: 10.1021/acsanm.2c05498
Haobing Zhao ₁ , Hailong Hu _{1,

2} , Jinping Zheng ₁ , Yuan Qie ₁ , Kuibao Yu ₁ , Yangbin Zhu ₃ , Zhiqi Luo ₁ , Lihua Lin _{1,

2} , Kaiyu Yang ₁ , Tailiang Guo _{1,

2} , Fushan Li _{1,

2}

Affiliation

With tunable emission in the full visible region, the ecofriendly InP quantum dots (QDs) show unique application prospects in light-emitting devices. At present, InP QDs suffer from wide-bandwidth emission, especially for electroluminescence (EL), which hinders their applications in high-performance display devices. Here, we report a facile one-pot synthesis of narrow-bandwidth InP/ZnSeS/ZnS QDs using a safe phosphorus source of tris(dimethylamino)phosphine, in which the ZnSeS inner-shell layer is formed via temperature-gradient solution growth from 240 to 280 °C. The synthesized green QDs have a high photoluminescence quantum yield (PLQY) of 91% and full width at half-maximum (fwhm) of 36 nm. Moreover, the resultant quantum dot light-emitting devices (QLEDs) also show a narrow fwhm of 42 nm, which is the narrowest emission of green InP QLEDs based on a safe phosphorus source reported so far. Further modulation of the electron injection into the device by inserting a thin layer of lithium fluoride results in a peak external quantum efficiency of 5.56%.

中文翻译：

用于窄带宽发光器件的 InP 多壳量子点的一锅法合成

环保型 InP 量子点 (QD) 在整个可见光区域具有可调谐发射，在发光器件中显示出独特的应用前景。目前，InP量子点存在宽带发射问题，尤其是电致发光（EL），这阻碍了它们在高性能显示器件中的应用。在这里，我们报告了使用三（二甲基氨基）膦的安全磷源轻松一锅法合成窄带宽 InP/ZnSeS/ZnS QD，其中 ZnSeS 内壳层是通过温度梯度溶液生长从 240至 280 °C。合成的绿色 QD 具有 91% 的高光致发光量子产率 (PLQY) 和 36 nm 的半峰全宽 (fwhm)。此外，由此产生的量子点发光器件 (QLED) 还显示出 42 nm 的窄 fwhm，这是迄今为止报道的基于安全磷源的绿色 InP QLED 的最窄发射。通过插入一层薄薄的氟化锂进一步调制电子注入到器件中，导致峰值外部量子效率为 5.56%。

更新日期：2023-02-22

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