在 P-(SiO/SiO2) 多层膜中形成的重掺杂 Si 纳米晶体：Si 基红外等离子体的有前途的途径,ACS Applied Nano Materials

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在 P-(SiO/SiO2) 多层膜中形成的重掺杂 Si 纳米晶体：Si 基红外等离子体的有前途的途径
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2023-02-22 , DOI: 10.1021/acsanm.2c05088
Alix Valdenaire ₁ , Alaa Eldin Giba _{1,

2} , Mathieu Stoffel ₁ , Xavier Devaux ₁ , Loïc Foussat ₃ , Jean-Marie Poumirol ₃ , Caroline Bonafos ₃ , Sonia Guehairia ₄ , Rémi Demoulin ₄ , Etienne Talbot ₄ , Michel Vergnat ₁ , Hervé Rinnert ₁

Affiliation

作为涉及纳米级耦合的多功能材料的构建块，高掺杂半导体纳米晶体对于纳米光子学的潜在应用具有极大的兴趣。在这项工作中，我们研究了嵌入二氧化硅基质中的高掺杂硅纳米晶体的等离子体特性。这些材料是通过蒸发重磷掺杂的 SiO/SiO ₂在超高真空室中形成多层膜，然后进行快速热退火。对于 0.7 和 1.9 原子％之间的 P 含量，纳米尺度的结构研究清楚地证明 P 原子主要位于 Si 纳米晶体的核心，浓度高达 10 原子％，即远远超过 P 在硅中的固溶度极限体硅。对于多层中超过 4 原子％的 P 含量，观察到合金化和 SiP 纳米颗粒的形成。红外吸收测量提供了位于 3–6 μm 范围内的局部表面等离子体共振的证据。核壳结构用于模拟嵌入二氧化硅基质中的硅纳米晶体。基于 Mie 理论和 Drude 模型，从模拟中提取了迁移率和自由载流子密度，其值达到 27 cm ²分别为V ^–1 s ^–1和 2.3 × 10 ²⁰ cm ^–3。这导致大约 8% 的掺杂剂激活率。

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Heavily Doped Si Nanocrystals Formed in P-(SiO/SiO2) Multilayers: A Promising Route for Si-Based Infrared Plasmonics

As building blocks of multifunctional materials involving coupling at the nanoscale, highly doped semiconductor nanocrystals are of great interest for potential applications in nanophotonics. In this work, we investigate the plasmonic properties of highly doped Si nanocrystals embedded in a silica matrix. These materials are obtained by evaporation of heavily phosphorus-doped SiO/SiO₂ multilayers in an ultrahigh vacuum chamber followed by rapid thermal annealing. For P contents between 0.7 and 1.9 atom %, structural investigations at the nanoscale give clear evidence that P atoms are mainly located in the core of Si nanocrystals with concentrations reaching up to 10 atom %, i.e., well beyond the solid solubility limit of P in bulk Si. Alloying and formation of SiP nanoparticles are observed for P contents exceeding 4 atom % in the multilayer. Infrared absorption measurements give evidence of a localized surface plasmon resonance located in the 3–6 μm range. A core–shell structure was used to model Si nanocrystals embedded in a silica matrix. Based on the Mie theory and the Drude model, both the mobility and the free charge carrier density were extracted from the simulation, with values reaching 27 cm² V^–1 s^–1 and 2.3 × 10²⁰ cm^–3, respectively. This results in a dopant activation rate of about 8%.

更新日期：2023-02-22

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