With the rapid development of electronic components toward miniaturization and integration, ZnO-based varistor ceramics sintered at a low temperature below 961 °C have received extensive attention. This work systematically explored the effect of sintering temperature on the microstructure and electrical properties of 98 mol%ZnO + 0.5 mol%V₂O₅ + 0.5 mol%TiO₂ + 0.5 mol%Co₂O₃ + 0.5 mol%MnO (short for ZVTCM) ceramics prepared via a conventional solid-state method. The X-ray diffraction results revealed that all the ZVTCM ceramics consist of major ZnO grains, and minor secondary phases, including Zn₃(VO₄)₂ and Mn₂TiO₄. Furthermore, the average grain size was found to increase from 2.69 to 11.42 μm until the sintering temperature reaches up to 925 °C. Higher sintering temperature results in an abnormal grain growth behavior and increased content of oxygen vacancies in ZVTCM ceramics, tending to degrade the varistor properties. Excellent varistor properties can be available in the ZVTCM ceramic sintered at 850 °C, involving a nonlinear coefficient (α) of 21.9, a leakage current density (J_L) of 59.4 μA/cm², and a breakdown electric field (E_1mA) of 523 V/mm.

随着电子元器件向小型化、集成化快速发展，961℃以下低温烧结的ZnO基压敏陶瓷受到广泛关注。本工作系统地探讨了烧结温度对98 mol%ZnO + 0.5 mol%V ₂ O ₅  + 0.5 mol%TiO ₂  + 0.5 mol%Co ₂ O ₃  + 0.5 mol%MnO（简称ZVTCM）陶瓷通过传统的固态方法制备。X 射线衍射结果表明，所有 ZVTCM 陶瓷均由主要的 ZnO 晶粒和次要的二次相组成，包括 Zn ₃ (VO ₄ ) ₂和 Mn ₂二氧化钛₄。此外，发现平均晶粒尺寸从 2.69 增加到 11.42 μm，直到烧结温度达到 925 °C。较高的烧结温度会导致 ZVTCM 陶瓷中晶粒生长异常和氧空位含量增加，从而降低压敏电阻的性能。在 850 °C 下烧结的 ZVTCM 陶瓷具有优异的压敏电阻特性，非线性系数 ( α ) 为 21.9，漏电流密度 ( J _L ) 为 59.4 μA/cm ²，击穿电场 ( E _1mA ) 523 伏/毫米。