Near-Complete Suppression of Surface Recombination in Solar Photoelectrolysis by “Co-Pi” Catalyst-Modified W:BiVO4,Journal of the American Chemical Society

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Near-Complete Suppression of Surface Recombination in Solar Photoelectrolysis by “Co-Pi” Catalyst-Modified W:BiVO4
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2011-11-16 , DOI: 10.1021/ja207348x
Diane K. Zhong ₁ , Sujung Choi ₁ , Daniel R. Gamelin ₁

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The influence of an earth-abundant water oxidation electrocatalyst (Co-Pi) on solar water oxidation by W:BiVO(4) has been studied using photoelectrochemical (PEC) techniques. Modification of W:BiVO(4) photoanode surfaces with Co-Pi has yielded a very large (∼440 mV) cathodic shift in the onset potential for sustained PEC water oxidation at pH 8. PEC experiments with H(2)O(2) as a surrogate substrate have revealed that interfacing Co-Pi with these W:BiVO(4) photoanodes almost completely eliminates losses due to surface electron-hole recombination. The results obtained for W:BiVO(4) are compared with those reported recently for Co-Pi/α-Fe(2)O(3) photoanodes. The low absolute onset potential of ∼310 mV vs RHE achieved with the Co-Pi/W:BiVO(4) combination is promising for overall solar water splitting in low-cost tandem PEC cells, and is encouraging for application of this surface modification strategy to other candidate photoanodes.

中文翻译：

通过“Co-Pi”催化剂改性的 W:BiVO4 近乎完全抑制太阳能光电解中的表面复合

已经使用光电化学 (PEC) 技术研究了地球丰富的水氧化电催化剂 (Co-Pi) 对 W:BiVO(4) 太阳能水氧化的影响。用 Co-Pi 对 W:BiVO(4) 光阳极表面进行改性后，在 pH 8 时持续 PEC 水氧化的起始电位产生了非常大的阴极位移 (~440 mV)。 PEC 实验与 H(2)O(2)作为替代基材，Co-Pi 与这些 W:BiVO(4) 光阳极的接口几乎完全消除了由于表面电子 - 空穴复合引起的损失。将 W:BiVO(4) 获得的结果与最近报道的 Co-Pi/α-Fe(2)O(3) 光阳极的结果进行比较。使用 Co-Pi/W:BiVO(4) 组合实现的~310 mV 相对于 RHE 的低绝对起始电位有望用于低成本串联 PEC 电池中的整体太阳能水分解，

更新日期：2011-11-16

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