Homogeneously Oriented Organic Single-Crystalline Patterns Grown by Microspacing In-Air Sublimation,Small Methods

当前位置： X-MOL 学术 › Small Methods › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Homogeneously Oriented Organic Single-Crystalline Patterns Grown by Microspacing In-Air Sublimation
Small Methods ( IF 10.7 ) Pub Date : 2023-02-19 , DOI: 10.1002/smtd.202201374
Qinglian Lin ₁ , Xin Ye ₁ , Qing Guo ₁ , Xiaoxin Zheng ₁ , Quanxiang Han ₁ , Cuicui Li ₁ , Jinke Jiang ₁ , Yang Liu ₁ , Xutang Tao ₁

Affiliation

Fabrication of single-crystalline organic semiconductor patterns is of key importance to enable practical applications. However due to the poor controllability on nucleation locations and the intrinsic anisotropic nature of single-crystals, growth of single-crystal patterns with homogeneous orientation is a big challenge especially by the vapor method. Herein a vapor growth protocol to achieve patterned organic semiconductor single-crystals with high crystallinity and uniform crystallographic orientation is presented. The protocol relies on the recently invented microspacing in-air sublimation assisted with surface wettability treatment to precisely pin the organic molecules at desired locations, and inter-connecting pattern motifs to induce homogeneous crystallographic orientation. Single-crystalline patterns with different shapes and sizes, and uniform orientation are demonstrated exemplarily by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT). Field-effect transistor arrays fabricate on the patterned C8-BTBT single-crystal patterns show uniform electrical performance: a 100% yield with an average mobility of 6.28 cm² V⁻¹ s⁻¹ and in a 5 × 8 array. The developed protocols overcome the uncontrollability of the isolated crystal patterns in vapor growth on non-epitaxial substrates, making it possible to align the anisotropic electronic nature of single-crystal patterns in large-scale devices integration.

中文翻译：

通过微间距空气升华生长的均匀取向的有机单晶图案

单晶有机半导体图案的制造对于实现实际应用至关重要。然而，由于成核位置的可控性差和单晶固有的各向异性，均匀取向的单晶图案的生长是一个很大的挑战，特别是通过气相法。本文提出了一种气相生长协议，以实现具有高结晶度和均匀结晶取向的图案化有机半导体单晶。该协议依赖于最近发明的微间距空气升华辅助表面润湿性处理，以精确地将有机分子固定在所需位置，并相互连接图案图案以诱导均匀的晶体取向。具有不同形状和大小的单晶图案，和均匀取向通过使用2,7-二辛基[1]苯并噻吩并[3,2-b][1]苯并噻吩(C8-BTBT)示例性地证明。在图案化的 C8-BTBT 单晶图案上制造的场效应晶体管阵列显示出均匀的电气性能：100% 的成品率和 6.28 cm 的平均迁移率² V ⁻¹ s ⁻¹和 5 × 8 阵列。开发的协议克服了非外延基板上气相生长中孤立晶体图案的不可控性，使得在大规模器件集成中对齐单晶图案的各向异性电子特性成为可能。

更新日期：2023-02-19

点击分享查看原文

点击收藏

阅读更多本刊新发论文