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High Efficiency Near-Infrared Perovskite Light Emitting Diodes With Reduced Rolling-Off by Surface Post-Treatment
Small ( IF 13.0 ) Pub Date : 2023-02-17 , DOI: 10.1002/smll.202207769
Jianwu Wei 1 , Jiong Li 2 , Chenghao Duan 2 , Ligang Yuan 2 , Shibing Zou 2 , Qi Pang 1 , Keyou Yan 2
Affiliation  

The rolling-off phenomenon of device efficiency at high current density caused by quenching of luminescence in perovskite light-emitting diodes (PeLED) is challenging to be solved. Here, 2-amino-5-iodopyrazine (AIPZ) is dissolved in a mixed solvent of chlorobenzene (CB)/isopropanol (IPA) (7:3 volume ratio) for surface post-treatment of FAPbI3 perovskite film. The interaction of AIPZ and perovskite surface not only balances the charge injection but also passivates defects to enhance radiative recombination in PeLED. Therefore, the PeLED champion yields peak external quantum efficiency reaching 23.2% at the current density of 45 mA cm−2 with a radiance brightness of 290 W sr−1 m−2. More importantly, the rolling-off of device efficiency is significantly reduced. The lowest rolling-off devices can maintain 80% of peak EQE (22.1%) at a high current density of 460 mA cm−2, whereas the control device only retains 25% of the peak EQE value. This work provides an effective strategy to improve performance and reduce the EQE rolling-off of PeLED for practical application.

中文翻译:

通过表面后处理减少滚降的高效近红外钙钛矿发光二极管

钙钛矿发光二极管 (PeLED) 中发光猝灭导致的高电流密度下器件效率的滚降现象具有挑战性。在这里,将 2-氨基-5-碘吡嗪 (AIPZ) 溶解在氯苯 (CB)/异丙醇 (IPA)(7:3 体积比)的混合溶剂中,用于 FAPbI 3钙钛矿薄膜的表面后处理。AIPZ 和钙钛矿表面的相互作用不仅可以平衡电荷注入,还可以钝化缺陷以增强 PeLED 中的辐射复合。因此,PeLED 冠军在 45 mA cm -2的电流密度和290 W sr -1 m -2的辐射亮度下产生的峰值外量子效率达到 23.2%. 更重要的是,器件效率的滚降显着降低。最低滚降装置可以在 460 mA cm -2的高电流密度下保持 80% 的峰值 EQE (22.1%) ,而控制装置仅保持 25% 的峰值 EQE 值。这项工作提供了一种有效的策略来提高性能并减少实际应用中 PeLED 的 EQE 滚降。
更新日期:2023-02-17
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