Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of their intrinsic anisotropy makes it promising to control multiple degrees of the storage “medium”. Here, we have discovered intriguing in-plane electrical and magnetic anisotropies in van der Waals (vdW) multiferroic CuCrP₂S₆. The uniaxial anisotropies of current rectifications, magnetic properties and magnon modes are demonstrated and manipulated by electric direction/polarity, temperature variation and magnetic field. More important, we have discovered the spin-flop transition corresponding to specific resonance modes, and determined the anisotropy parameters by consistent model fittings and theoretical calculations. Our work provides in-depth investigation and quantitative analysis of electrical and magnetic anisotropies with the same easy axis in vdW multiferroics, which will stimulate potential device applications of artificial bionic synapses, multi-terminal spintronic chips and magnetoelectric devices.

多铁性材料由于其铁电和铁磁有序共存的独特特性，在用于低功耗和超高密度信息存储的非易失性器件中具有巨大潜力。对其固有各向异性的有效操纵使其有望控制存储“介质”的多个度数。在这里，我们发现了范德华 (vdW) 多铁性 CuCrP ₂ S _{6中有趣的面内电和磁各向异性}. 电流整流、磁特性和磁振子模式的单轴各向异性通过电方向/极性、温度变化和磁场来证明和操纵。更重要的是，我们发现了特定共振模式对应的自旋触发器跃迁，并通过一致性模型拟合和理论计算确定了各向异性参数。我们的工作对 vdW 多铁性材料中具有相同易轴的电学和磁学各向异性进行了深入研究和定量分析，这将激发人工仿生突触、多端自旋电子芯片和磁电器件的潜在器件应用。