Due to high affinity and extensive surface area between arsenic and nitrogen in C₃N, the two-dimensional C₃N monolayer has considerable the potential to effectively adjust the release of gaseous As₂O₃. By performing density functional theory (DFT) calculations, the adsorption of As₂O₃ on the surface of C₃N monolayer was investigated. The results revealed that site C₄N₂ on the surface of the C₃N monolayer has greater ability than site C₆ to strongly adsorb As₂O₃. Also, the recovery time of the C₃N monolayer for As₂O₃ were about 25.64 s and 5.23 μs at 298 and 400 K, respectively. The results related to the charge transfer (CT), adsorption stability, electronic and geometric structure confirmed that the C₃N monolayer was an appropriate choice for adsorption of As₂O₃. Overall, the C₃N monolayer can be considered as one of the most suitable adsorbents that can be used to effectively control gaseous As₂O₃.

由于C ₃ N中砷和氮之间的高亲和力和大表面积，二维C ₃ N单层具有相当大的潜力来有效调节气态As ₂ O ₃的释放。通过密度泛函理论(DFT)计算，研究了As ₂ O _{3在C 3} N单层表面的吸附。结果表明，C ₃ N单分子层表面的C ₄ N _{2 位比C 6}位具有更强的吸附As ₂ O ₃的能力。此外，C的恢复时间As ₂ O _3的3 N 单层在 298 和 400 K 时分别约为 25.64 s 和 5.23 μs。与电荷转移 (CT)、吸附稳定性、电子和几何结构相关的结果证实，C ₃ N 单分子层是吸附 As ₂ O ₃的合适选择。总的来说，C ₃ N单分子层可以被认为是最适合用于有效控制气态As ₂ O ₃的吸附剂之一。