We proposed a room-temperature wafer-bonding method using activated Si atomic layer and verify its effectiveness for the fabrication of glass- or sapphire-based LiNbO₃-on-insulator (LNOI) devices for radio-frequency photonic applications. Four-inch LiNbO₃ was successfully fabricated on glass or sapphire wafers using the proposed method. The tensile strength of the fabricated wafers exceeded 23 MPa, which indicates that the bond between the LiNbO₃ and glass or sapphire wafers was strong. Atomic-structure analysis of bonding interfaces confirmed the effectiveness of the activated Si atomic layer as an adhesive for both LiNbO₃/glass and LiNbO₃/sapphire. In addition, the amorphous Si atomic layer existing at the bonding interface showed high transmittance over a wide range of wavelength, including the near-infrared region used for communication. The results demonstrate the potential of the proposed wafer-bonding method for the fabrication of LNOI devices used in optical communications, including broadband traveling-wave modulators.

我们提出了一种使用激活的 Si 原子层的室温晶圆键合方法，并验证了其在制造用于射频光子应用的基于玻璃或蓝宝石的绝缘体上LiNbO _{3 (LNOI) 器件方面的有效性。}使用所提出的方法在玻璃或蓝宝石晶片上成功制造了四英寸的 LiNbO _{3 。}制造的晶片的抗拉强度超过23 MPa，这表明LiNbO ₃与玻璃或蓝宝石晶片之间的结合牢固。键合界面的原子结构分析证实了活化的 Si 原子层作为 LiNbO ₃ /玻璃和 LiNbO _{3粘合剂的有效性}/蓝宝石。此外，存在于键合界面的非晶硅原子层在很宽的波长范围内表现出高透射率，包括用于通信的近红外区域。结果证明了所提出的晶圆键合方法在制造光通信中使用的 LNOI 器件（包括宽带行波调制器）方面的潜力。