Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga2O3 Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices,ACS Applied Nano Materials

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Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga2O3 Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2023-02-08 , DOI: 10.1021/acsanm.2c05459
Qing Liu _{1,

2} , Jiaming Guo _{1,

2} , Jing Li _{1,

2} , Lizhi Feng _{1,

2} , Lixin Chen _{1,

2} , Zhe Hua _{1,

2} , Liu Yang ₃ , Xinglai Zhang ₃ , Baodan Liu _{1,

2}

Affiliation

Herein, we demonstrated the controllable synthesis of a centimeter-scale two-dimensional (2D) ZnO-doped Ga₂O₃ nanostructure layer by a liquid Ga–Zn alloy printing strategy at near room temperature. Different from the liquid Ga–In and Ga–In–Sn alloys, the surface oxidation behavior of a liquid Ga–Zn alloy follows an obvious competition and cooxidation characteristics instead of the dominant oxidation characteristic of Ga, which could be effectively used to precisely tailor the Zn content of 2D Ga₂O₃ films. With an increase of the nominal Zn content in the Ga–Zn alloy from 0 to 8 atom %, the real Zn content of 2D ZnO-doped Ga₂O₃ films gradually increases and finally reaches a maximum saturated value of 16–18 atom % at the eutectic component of 3.87 atom %. Correspondingly, the transmittance and band gap of 2D ZnO-doped Ga₂O₃ films could also be tuned by changes of the Zn content and crystallinity. The method proposed in this work provides a general route toward the doping synthesis of a diverse nonlayered 2D structure, which will shed light on the applications of various displays and deep-ultraviolet optoelectronic devices.

中文翻译：

大面积透明二维 ZnO 掺杂 Ga2O3 纳米结构基层的室温制备：对光电纳米器件的影响

在此，我们展示了在接近室温下通过液态 Ga-Zn 合金印刷策略可控合成厘米级二维 (2D) ZnO 掺杂的 Ga ₂ O _{3纳米结构层。}与液态 Ga-In 和 Ga-In-Sn 合金不同，液态 Ga-Zn 合金的表面氧化行为遵循明显的竞争和共氧化特征，而不是 Ga 的主导氧化特征，可以有效地用于精确定制2D Ga ₂ O ₃薄膜的Zn含量。随着 Ga-Zn 合金中标称 Zn 含量从 0 增加到 8 atom %，二维 ZnO 掺杂 Ga ₂ O _{3的实际 Zn 含量}薄膜逐渐增加，最终在 3.87 原子％的共晶成分处达到 16-18 原子％的最大饱和值。_{相应地，二维ZnO掺杂的Ga 2} O ₃薄膜的透射率和带隙也可以通过Zn含量和结晶度的变化来调节。这项工作中提出的方法为多种非层状二维结构的掺杂合成提供了一条通用途径，这将阐明各种显示器和深紫外光电子器件的应用。

更新日期：2023-02-08

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