The crystal plane with the highest electron and hole mobility in a material is very important to physical and chemical properties. Herein, the BiVO₄ (BVO) thin films exposed (0 1 0) or (1 0 0) planes which pointed out as the facets with the highest electron and hole mobility, and formed the interface with SrTiO₃ (STO) were fabricated by magnetron sputtering. The band edge offsets calculation results of oriented BVO and STO show that the conduction band and valence band positions of the BVO (0 1 0) plane are 0.23 eV higher than those of (1 0 0). The average generation rates of H₂O₂ in BVO(1 0 0) are 5.3 × 10⁻² and 3.8 × 10⁻¹ µmol h⁻¹ under 440 nm monochromatic light and full arc Xe lamp irradiation, which are 1.8 and 1.6 times higher than those in BVO(0 1 0), respectively.

材料中具有最高电子和空穴迁移率的晶面对物理和化学性能非常重要。在此，BiVO ₄ (BVO) 薄膜暴露 (0  1  0) 或 (1  0  0) 平面，指出具有最高电子和空穴迁移率的小平面，并与 SrTiO ₃ (STO)形成界面磁控溅射。定向BVO和STO的带边偏移计算结果表明，BVO（0  1  0）平面的导带和价带位置比（1  0  0）高0.23 eV。BVO(1 0 0)中H ₂ O ₂的平均生成率为5.3×10  ⁻²和 3.8 × 10 ^-1 µmol h ^-1 在 440 nm 单色光和全弧 Xe 灯照射下，分别是 BVO(0 1  0)的 1.8 和 1.6 倍。