In recent years, CsPbBr₃ perovskite solar cells (PSCs) have attracted the attention of a large number of researchers due to their excellent temperature and humidity stability. And in the current studies, due to the lack of suitable solvents to dissolve PbBr₂ and CsBr at the same time, most studies have used sequential solution-processing techniques (SSPTs) to prepare CsPbBr₃ films. However, in the process of the sequential deposition of PbBr₂ and CsBr, the uneven reaction could lead to the generation of impure phase (e.g. CsPb₂Br₅ and Cs₄PbBr₆), which would deteriorate the photoelectric performance of the device. Here, a solvent-vapor annealing (SA) method has been proposed for fabricating mesoporous PbBr₂ films by exposing the PbBr₂ films in N,N-Dimethylformamide (DMF) vapor environment. The porous PbBr₂ frameworks could facilitate the reaction with CsBr to fully convert into inorganic perovskite CsPbBr₃. A series of characterization results show that a compact, uniform and high-quality CsPbBr₃ film with large grains was obtained, where the porosity of PbBr₂ scaffold could be tuned by the volume of DMF. Consequently, the devices based on optimized PbBr₂ films treated by SA method achieved a champion power convention efficiency (PCE) of 9.60%, an open-circuit voltage (V_OC) of 1.54 V, a short-circuit current density (J_SC) of 7.57 mA cm⁻² and a fill factor (FF) of 82.37%, compared with the devices treated by conventional thermal annealing (TA) method achieved a PCE of 8.42%, a V_OC of 1.49 V, J_SC of 7.31 mA cm⁻² and FF of 77.30%. Furthermore, the SA treated devices exhibit more durable stability than TA treated devices, and the SA treated devices still retain 94.28% of its original PCE without any encapsulation in the ambient atmosphere after 30 days.

近年来，CsPbBr ₃钙钛矿太阳能电池（PSCs）以其优异的温度和湿度稳定性吸引了大量研究人员的关注。而在目前的研究中，由于缺乏合适的溶剂同时溶解PbBr ₂和CsBr，大多数研究采用顺序溶液处理技术（SSPTs）来制备CsPbBr ₃薄膜。然而，在PbBr ₂和CsBr的顺序沉积过程中，反应不均匀可能导致不纯相的产生（例如CsPb ₂ Br ₅和Cs ₄ PbBr ₆), 这会降低器件的光电性能。在此，提出了一种溶剂蒸汽退火 (SA) 方法，通过将 PbBr ₂薄膜暴露在N,N -二甲基甲酰胺 (DMF) 蒸汽环境中来制造介孔 PbBr _2薄膜。多孔的PbBr ₂骨架可以促进与CsBr的反应以完全转化为无机钙钛矿CsPbBr ₃。一系列表征结果表明，获得了致密、均匀、高质量的大晶粒CsPbBr ₃薄膜，其中PbBr ₂支架的孔隙率可以通过DMF的体积进行调节。因此，基于优化的 PbBr _2的设备SA 法处理的薄膜达到了 9.60% 的冠军功率转换效率 (PCE)、1.54 V 的开路电压 ( V _OC ) 、7.57 mA cm ⁻²的短路电流密度 ( J _SC )和填充因子 (FF) 为 82.37%，与传统热退火 (TA) 方法处理的器件相比，PCE 为 8.42%，V _OC为 1.49 V，J _SC为 7.31 mA cm ^-2和 FF 为 77.30%。此外，经过 SA 处理的设备比 TA 处理的设备表现出更持久的稳定性，经过 SA 处理的设备在 30 天后仍保留其原始 PCE 的 94.28%，没有任何封装在环境大气中。