当前位置：
X-MOL 学术
›
Energy Technol.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
ZnO-Doped In2O3 Front Transparent Contact Enables >24.0% Silicon Heterojunction Solar Cells
Energy Technology ( IF 3.6 ) Pub Date : 2023-02-07 , DOI: 10.1002/ente.202201310
Qingqing Qiu 1 , Yu Bai 1 , Junjun Li 1 , Cong Guo 1 , Hongyuan Chen 2 , Haichuan Zhang 2 , Jianhua Shi 2, 3 , Wenzhu Liu 3 , Tao Chen 1 , Jiaxuan Liao 4 , Jian Yu 1, 4
Energy Technology ( IF 3.6 ) Pub Date : 2023-02-07 , DOI: 10.1002/ente.202201310
Qingqing Qiu 1 , Yu Bai 1 , Junjun Li 1 , Cong Guo 1 , Hongyuan Chen 2 , Haichuan Zhang 2 , Jianhua Shi 2, 3 , Wenzhu Liu 3 , Tao Chen 1 , Jiaxuan Liao 4 , Jian Yu 1, 4
Affiliation
|
Transparent conductive oxide (TCO) film acts as the window layer and carrier transport layer of silicon heterojunction (SHJ) solar cells. The optoelectrical and contact properties of TCO films, as well as the sputtering damage, limit the further efficiency improvement. Herein, the microstructure, morphology, and optoelectrical properties of sputtering-prepared zinc-doped indium oxide (IZO) are analyzed. The substrate temperature has a significant impact on the film growth and the cell performance. The IZO film is amorphous when substrate temperature is below 200 °C, while it seems the emergence of nanocrystals with the increased temperature, resulting in the highest conductivity (3070 S cm−1) and carrier mobility (47.9 cm2 V−1 s−1). In addition, the low carrier concentration and surface potential of IZO promote less optical parasitic absorption and higher work function. The IZO films are applied as the contact layer of SHJ solar cells. An impressive efficiency of 24.02% on an M2-sized wafer is achieved, indicating great potential for the mass production application after careful optimization.
中文翻译：
ZnO 掺杂的 In2O3 正面透明触点可实现 >24.0% 的硅异质结太阳能电池
透明导电氧化物（TCO）薄膜作为硅异质结（SHJ）太阳能电池的窗口层和载流子传输层。TCO薄膜的光电和接触特性以及溅射损伤限制了效率的进一步提高。在此，分析了溅射制备的掺锌氧化铟 (IZO) 的微观结构、形貌和光电性能。基板温度对薄膜生长和电池性能有重大影响。当衬底温度低于 200 °C 时，IZO 薄膜是非晶态的，而随着温度的升高，似乎出现了纳米晶体，导致最高的电导率 (3070 S cm -1 ) 和载流子迁移率 ( 47.9 cm 2 V -1 s - 1个). 此外，IZO 的低载流子浓度和表面电势促进了更少的光学寄生吸收和更高的功函数。IZO 薄膜被用作 SHJ 太阳能电池的接触层。在 M2 尺寸晶圆上实现了 24.02% 的令人印象深刻的效率，表明经过精心优化后具有巨大的量产应用潜力。
更新日期：2023-02-07
中文翻译：
ZnO 掺杂的 In2O3 正面透明触点可实现 >24.0% 的硅异质结太阳能电池
透明导电氧化物（TCO）薄膜作为硅异质结（SHJ）太阳能电池的窗口层和载流子传输层。TCO薄膜的光电和接触特性以及溅射损伤限制了效率的进一步提高。在此，分析了溅射制备的掺锌氧化铟 (IZO) 的微观结构、形貌和光电性能。基板温度对薄膜生长和电池性能有重大影响。当衬底温度低于 200 °C 时，IZO 薄膜是非晶态的，而随着温度的升高，似乎出现了纳米晶体，导致最高的电导率 (3070 S cm -1 ) 和载流子迁移率 ( 47.9 cm 2 V -1 s - 1个). 此外，IZO 的低载流子浓度和表面电势促进了更少的光学寄生吸收和更高的功函数。IZO 薄膜被用作 SHJ 太阳能电池的接触层。在 M2 尺寸晶圆上实现了 24.02% 的令人印象深刻的效率，表明经过精心优化后具有巨大的量产应用潜力。
京公网安备 11010802027423号