通过控制用于可切换逻辑应用的 Ga2O3 纳米结构中的晶相来调节深紫外光电流的双极性,Advanced Electronic Materials

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通过控制用于可切换逻辑应用的 Ga2O3 纳米结构中的晶相来调节深紫外光电流的双极性
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2023-02-07 , DOI: 10.1002/aelm.202201216
Yuexing Cheng ₁ , Junhao Ye ₁ , Li Lai ₁ , Shi Fang ₂ , Daoyou Guo ₁

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光电化学光电流开关（PEPS）效应可以调节光电流的极性，在逻辑门、光突触和人工智能等领域具有重要的潜在应用。在这项工作中，首次报道了纯Ga ₂ O _{3光电化学系统表现出由深紫外诱导的双极性光电流行为，这与Ga}₂ O ₃的晶相（α或β）和表面密切相关氧空位状态。_{此处设计的 Ga 2} O ₃海绵状多孔纳米棒阵列 (NRAs)不仅增加了 Ga ₂ O _{3的接触面积}与电解质一起使用还可以大大降低光的反射并提高光捕获能力。对于α相Ga ₂ O ₃，在NaOH溶液中，正偏压下光电流为正向，负偏压下为反向，表现出明显的双极性光电流现象，这可以归因于更多的氧空位表面态和较低的电位半导体/电解质界面处的势垒。此外，表面态对α-Ga ₂ O _{3双极性光电流行为的影响}NRAs通过氧等离子体的不同处理时间证明，其开关点在处理30分钟后从0 V移动到-0.19 V，并随着处理时间的增加继续向负方向移动。此外，基于α-Ga ₂ O ₃ NRAs的双极性光电流行为，制备了带电压的可调布尔逻辑门作为输入源，为后摩尔时代所需的光电器件多功能集成提供了一条新路径，具有由日盲深紫外光操纵的高精度。

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Ambipolarity Regulation of Deep-UV Photocurrent by Controlling Crystalline Phases in Ga2O3 Nanostructure for Switchable Logic Applications

Photoelectrochemical photocurrent switching (PEPS) effect can regulate the polarity of photocurrent, which has significant potential applications in areas such as logic gates, photosynapse, and artificial intelligence. In this work, it is reported for the first time that a pure Ga₂O₃ photoelectrochemical system exhibits ambipolar photocurrent behavior induced by deep ultraviolet, which is closely linked to the crystalline phase of Ga₂O₃ (α or β) and the surface states of oxygen vacancies. Spongy porous nanorod arrays (NRAs) of Ga₂O₃ designed here not only increase the contact area of Ga₂O₃ with the electrolyte but also can lower largely the reflection of light and improve light-trapping capacity. For α phase Ga₂O₃, the photocurrent is in a forward direction under positive bias and shows a backward direction under negative bias in NaOH solution, exhibiting a distinct ambipolar photocurrent phenomenon, which can be attributed to more oxygen vacancy surface states and lower potential barrier at the semiconductor/electrolyte interface. Furtherly, the effect of the surface states on the ambipolar photocurrent behavior of α-Ga₂O₃ NRAs is demonstrated by various treatment times of oxygen plasma, whose switching point moves from 0 V to −0.19 V with treatment for 30 min and continues to move in the negative direction with the increase of treatment time. Moreover, based on the ambipolar photocurrent behavior of α-Ga₂O₃ NRAs, adjustable Boolean logic gates with voltage are prepared as the input source, offering a new path for the photoelectric device multifunctional integration needed in the Post-Moore era, with a high accuracy manipulated by solar-blind deep ultraviolet light.

更新日期：2023-02-07

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