This study exploits the coupling of crystallographic and ferroelectric (FE) properties in an effort to enhance the FE performance of Hf_1–xZr_xO₂ (HZO). The proposed scheme involved optimizing the orientation of orthorhombic (O)-phase crystals along the preferred polarization axis by applying an electric pulse during annealing. The proposed electric pulse annealing (EPA) process reduced the need for wake-up treatment; however, it imposed limited changes on the amount of the O-phase and leakage performance, compared with rapid thermal annealing (RTA). Excessively high EPA doses induced an O → M (monoclinic) phase transformation, which sacrificed FE polarization but preserved the wake-up-free-like properties. Our results demonstrate that optimizing the orientation of polycrystalline O-phase may be as important as maximizing the quantity of O-phase for HZO applications.

中文翻译：

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通过晶体取向优化 Hf1–xZrxO2 薄膜的铁电性能

本研究利用晶体学和铁电 (FE) 特性的耦合来提高 Hf _{1– x} Zr _x O _{2的 FE 性能}(HZO)。所提出的方案涉及通过在退火过程中施加电脉冲来优化正交 (O) 相晶体沿首选偏振轴的取向。拟议的电脉冲退火 (EPA) 工艺减少了唤醒处理的需要；然而，与快速热退火 (RTA) 相比，它对 O 相量和泄漏性能的改变有限。过高的 EPA 剂量会引起 O → M（单斜）相变，这会牺牲 FE 极化但保留了类似唤醒的特性。我们的结果表明，优化多晶 O 相的取向可能与最大化 HZO 应用的 O 相数量一样重要。