Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received much attention due to their technological potential in terms of scalability, high-speed, and low-power operation. Unfortunately, however, HfO2-FeFETs also suffer from persistent reliability challenges, specifically affecting retention, endurance, and variability. A deep understanding of the reliability physics of HfO2-FeFETs is an essential prerequisite for the successful commercialization of this promising technology. In this article, we review the literature about the relevant reliability aspects of HfO2-FeFETs. We initially focus on the reliability physics of ferroelectric capacitors, as a prelude to a comprehensive analysis of FeFET reliability. Then, we interpret key reliability metrics of the FeFET at the device level (i.e., retention, endurance, and variability) based on the physical mechanisms previously identified. Finally, we discuss the implications of device-level reliability metrics at both the circuit and system levels. Our integrative approach connects apparently unrelated reliability issues and suggests mitigation strategies at the device, circuit, or system level. We conclude this article by proposing a set of research opportunities to guide future development in this field.

中文翻译：

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HfO2 基铁电 FET 的可靠性：对当前和未来挑战的批判性回顾


基于掺杂氧化铪 (HfO2) 的铁电晶体管 (FeFET) 因其在可扩展性、高速和低功耗运行方面的技术潜力而备受关注。然而不幸的是，HfO2-FeFET 也面临着持续的可靠性挑战，特别是影响保持性、耐久性和可变性。深入了解 HfO2-FeFET 的可靠性物理特性是这一前景广阔的技术成功商业化的重要先决条件。在本文中，我们回顾了有关 HfO2-FeFET 可靠性方面的相关文献。我们首先关注铁电电容器的可靠性物理，作为全面分析 FeFET 可靠性的前奏。然后，我们根据先前确定的物理机制解释 FeFET 在器件级别的关键可靠性指标（即保持性、耐用性和可变性）。最后，我们讨论电路和系统级别的器件级可靠性指标的含义。我们的综合方法连接了明显不相关的可靠性问题，并提出了设备、电路或系统级别的缓解策略。我们通过提出一系列研究机会来指导该领域的未来发展来结束本文。