The performance enhancement of integrated circuits relying on dimension scaling (i.e., following Moore’s Law) is more and more challenging owing to the physical limit of Si materials. Monolithic three-dimensional (M3D) integration has been considered as a powerful scheme to further boost up the system performance. Two-dimensional (2D) materials such as MoS₂ are potential building blocks for constructing upper-tier transistors owing to their high mobility, atomic thickness, and back-end-of-line (BEOL) compatible processes. The concept to integrate 2D material-based devices with Si field-effect transistor (FET) is technologically important but the compatibility is yet to be experimentally demonstrated. Here, we successfully integrated an n-type monolayer MoS₂ FET on a p-type Si fin-shaped FET with 20 nm fin width via an M3D integration technique to form a complementary inverter. The integration was enabled by deliberately adopting industrially matured techniques, such as chemical mechanical planarization and e-beam evaporation, to ensure its compatibility with the existing 3D integrated circuit process and the semiconductor industry in general. The 2D FET is fabricated using low-temperature sequential processes to avoid the degradation of lower-tier Si devices. The MoS₂ n-FETs and Si p-FinFETs display symmetrical transfer characteristics and the resulting 3D complementary metal-oxide-semiconductor inverter show a voltage transfer characteristic with a maximum gain of ~38. This work clearly proves the integration compatibility of 2D materials with Si-based devices, encouraging the further development of monolithic 3D integrated circuits.

由于Si材料的物理限制，依靠尺寸缩放(即遵循摩尔定律)的集成电路的性能提升越来越具有挑战性。单片三维 (M3D) 集成被认为是进一步提升系统性能的强大方案。二维 (2D) 材料，如 MoS ₂，由于其高迁移率、原子厚度和后道工序 (BEOL) 兼容工艺，是构建上层晶体管的潜在构建块。将基于二维材料的器件与 Si 场效应晶体管 (FET) 集成的概念在技术上很重要，但兼容性尚未通过实验证明。在这里，我们成功地集成了一个 n 型单层 MoS ₂FET 在具有 20 nm 鳍宽的 p 型硅鳍形 FET 上通过 M3D 集成技术形成互补反相器。集成是通过有意采用工业上成熟的技术实现的，例如化学机械平面化和电子束蒸发，以确保其与现有 3D 集成电路工艺和整个半导体行业的兼容性。2D FET 使用低温顺序工艺制造，以避免下层 Si 器件的退化。_二硫化钼n-FET 和 Si p-FinFET 显示出对称传输特性，由此产生的 3D 互补金属氧化物半导体反相器显示出最大增益约为 38 的电压传输特性。这项工作清楚地证明了二维材料与硅基器件的集成兼容性，推动了单片 3D 集成电路的进一步发展。