The effect of the nanocrystalline diamond (NCD) field plate on the electrical and thermal characteristics of Ga₂O₃ MOSFETs is systematically investigated by electrothermal device simulation. The NCD field plate increases the drain current due to the suppression of the self-heating-effect-induced current drop in the saturation region for Ga₂O₃ MOSFETs. A >67 % reduction of maximum temperature rise can be achieved for the devices operating at P = 1.4 W/mm by using the NCD field plate. The peak temperature of the NCD field-plated Ga₂O₃ MOSFET decreases as the field plate length increases, while a thicker field plate support layer (>400 nm) almost eliminates the field plate effect. These results show that the NCD field plate can enhance the electrical and thermal characteristics of Ga₂O₃ MOSFETs, and provide insight into the thermal design of Ga₂O₃-based power devices.

通过电热器件仿真系统地研究了纳米晶金刚石 (NCD) 场板对 Ga ₂ O _{3 MOSFET 的电气和热特性的影响。}由于抑制了 Ga ₂ O ₃ MOSFET 饱和区中自热效应引起的电流下降，NCD 场板增加了漏极电流。通过使用 NCD 场板，在P  = 1.4 W/mm 下运行的设备可以将最大温升降低 67% 以上。NCD场镀Ga ₂ O _{3的峰值温度}MOSFET 随着场板长度的增加而减小，而较厚的场板支撑层 (>400 nm) 几乎消除了场板效应。这些结果表明，NCD 场板可以增强 Ga ₂ O _{3 MOSFET 的电学和热学特性，并为基于 Ga 2} O ₃的功率器件的热设计提供见解。