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Centimeter-Scale PdS2 Ultrathin Films with High Mobility and Broadband Photoresponse
Small ( IF 13.0 ) Pub Date : 2023-02-01 , DOI: 10.1002/smll.202206915 Kun He 1 , Weiting Xu 1 , Jingmei Tang 2 , Yuan Lu 3 , Chen Yi 1 , Bailing Li 2 , Hongzhou Zhu 1 , Hongmei Zhang 2 , Xiaohui Lin 2 , Ya Feng 1 , Manli Zhu 1 , Jingru Shen 1 , Mianzeng Zhong 4 , Bo Li 1, 5, 6 , Xidong Duan 2
Small ( IF 13.0 ) Pub Date : 2023-02-01 , DOI: 10.1002/smll.202206915 Kun He 1 , Weiting Xu 1 , Jingmei Tang 2 , Yuan Lu 3 , Chen Yi 1 , Bailing Li 2 , Hongzhou Zhu 1 , Hongmei Zhang 2 , Xiaohui Lin 2 , Ya Feng 1 , Manli Zhu 1 , Jingru Shen 1 , Mianzeng Zhong 4 , Bo Li 1, 5, 6 , Xidong Duan 2
Affiliation
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2D materials with mixed crystal phase will lead to the nonuniformity of performance and go against the practical application. Therefore, it is of great significance to develop a valid method to synthesize 2D materials with typical stoichiometry. Here, 2D palladium sulfides with centimeter scale and uniform stoichiometric ratio are synthesized via controlling the sulfurization temperature of palladium thin films. The relationship between sulfurization temperature and products is investigated in depth. Besides, the high-quality 2D PdS2 films are synthesized via sulfurization at the temperature of 450–550 °C, which would be compatible with back-end-of-line processes in semiconductor industry with considering of process temperature. The PdS2 films show an n-type semiconducting behavior with high mobility of 10.4 cm2 V−1 s−1. The PdS2 photodetector presents a broadband photoresponse from 450 to 1550 nm. These findings provide a reliable way to synthesizing high-quality and large-area 2D materials with uniform crystal phase. The result suggests that 2D PdS2 has significant potential in future nanoelectronics and optoelectronic applications.
中文翻译：
具有高迁移率和宽带光响应的厘米级 PdS2 超薄膜
具有混晶相的二维材料会导致性能的不均匀性，不利于实际应用。因此，开发一种有效的方法来合成具有典型化学计量的二维材料具有重要意义。在这里，通过控制钯薄膜的硫化温度合成了具有厘米级和均匀化学计量比的二维硫化钯。深入研究了硫化温度与产物的关系。此外，高质量的 2D PdS 2薄膜是在 450–550 °C 的温度下通过硫化合成的，考虑到工艺温度，这将与半导体行业的后端工艺兼容。PdS 2薄膜显示出具有 10.4 cm 2 V -1 s -1的高迁移率的 n 型半导体行为。PdS 2光电探测器呈现从 450 到 1550 nm 的宽带光响应。这些发现为合成具有均匀晶相的高质量和大面积二维材料提供了可靠的方法。结果表明，2D PdS 2在未来的纳米电子学和光电子学应用中具有巨大的潜力。
更新日期：2023-02-01
中文翻译：
具有高迁移率和宽带光响应的厘米级 PdS2 超薄膜
具有混晶相的二维材料会导致性能的不均匀性，不利于实际应用。因此，开发一种有效的方法来合成具有典型化学计量的二维材料具有重要意义。在这里，通过控制钯薄膜的硫化温度合成了具有厘米级和均匀化学计量比的二维硫化钯。深入研究了硫化温度与产物的关系。此外，高质量的 2D PdS 2薄膜是在 450–550 °C 的温度下通过硫化合成的，考虑到工艺温度，这将与半导体行业的后端工艺兼容。PdS 2薄膜显示出具有 10.4 cm 2 V -1 s -1的高迁移率的 n 型半导体行为。PdS 2光电探测器呈现从 450 到 1550 nm 的宽带光响应。这些发现为合成具有均匀晶相的高质量和大面积二维材料提供了可靠的方法。结果表明，2D PdS 2在未来的纳米电子学和光电子学应用中具有巨大的潜力。
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