Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing,ACS Applied Nano Materials

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Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2023-01-31 , DOI: 10.1021/acsanm.2c05497
Alireza Moazzeni _{1,

2} , Hadi Riyahi Madvar _{1,

2} , Samaneh Hamedi _{1,

2} , Zoheir Kordrostami _{1,

2}

Affiliation

Recently, resistive switching memory (RRAM) has been attractive for implementing electronic synapses in neural networks and high-density memory technology. In this paper, we report a different technique for fabricating an Al/GO/ITO RRAM device with multilevel storage capability. In this work, graphene oxide (GO) thin films have been deposited by the spray pyrolysis technique (SPT) using GO powder synthesized by chemical oxidation of graphite flakes via the modified Hummers method. The fabricated RRAM shows good switching performance between On and Off states with the best memory window of 20 and presents reliable retention characteristics of 10⁴ s and 50 reproducible write–read DC cycles without degradation. The multilevel feature points out five stable multiresistant states obtained with the variation of the compliance current (I_cc) and reset voltage amplitude. The successful long-term potentiation and depression with 10 ms pulse operation allows to apply this memory in neuromorphic computing applications in addition to 11 gradual conductance levels achieved by continuous set and reset cycles. A comparison of the efficiency of SPT with that of the typical spin coating method showed a notable (87%) yield achieved by SPT. The combination of the multilevel capacity of fabricated RRAMs with SPT was exploited to suggest that GO-based RRAMs have the potential to be used as multibit GO memristors and electronic synapse devices for emerging neuromorphic chips. In addition, this work paves the way for the fabrication of solution-based, low-cost, simple and large-scale GO memristors for future electronics.

中文翻译：

用于神经形态计算的喷雾热解技术制备基于氧化石墨烯的电阻开关存储器

最近，电阻开关存储器 (RRAM) 在神经网络和高密度存储器技术中实现电子突触方面颇具吸引力。在本文中，我们报告了一种制造具有多级存储能力的 Al/GO/ITO RRAM 器件的不同技术。在这项工作中，氧化石墨烯 (GO) 薄膜通过喷雾热解技术 (SPT) 沉积，使用通过改进的 Hummers 方法化学氧化石墨片合成的 GO 粉末。制造的 RRAM 在 On 和 Off 状态之间显示出良好的切换性能，最佳内存窗口为 20，并呈现 10 ^{4的可靠保持特性}s 和 50 个可重现的写-读 DC 周期而没有退化。多级特征指出随顺从电流 ( I _cc）和复位电压幅度。除了通过连续设置和重置周期实现的 11 个渐进电导水平之外，10 毫秒脉冲操作的成功长期增强和抑制允许将该存储器应用于神经形态计算应用程序。SPT 与典型旋涂方法的效率比较表明，SPT 实现了显着的 (87%) 产率。利用制造的 RRAM 的多级容量与 SPT 的组合表明基于 GO 的 RRAM 有可能用作新兴神经形态芯片的多位 GO 忆阻器和电子突触设备。此外，这项工作为未来电子产品制造基于溶液的、低成本、简单和大规模的 GO 忆阻器铺平了道路。

更新日期：2023-01-31

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