Recently, the thin amorphous GaO nanosheet attracts enormous interest in dielectric and passivation materials, but it is still lack of the study about its photodetection performance. In this work, the amorphous GaO nanosheet is peeled off from the Ga solid-melt surface. Its amorphous characteristic is verified by selected area electron diffraction and X-ray diffraction. Owing to the limited absorption ability and abundant defect states, the amorphous GaO nanosheet photodetector shows a low photocurrent and slow response time even at a bias voltage. For improving the photodetection performance, PbI nanosheet is selected to be grown on the surface of amorphous GaO nanosheet. Owing to the built-in electric field at the interface, the GaO/PbI heterojunction photodetector can work at a bias voltage of 0 V, along with a larger photocurrent of 1.6 nA and faster response times of about 2 ms (rise time) and 3 ms (decay time). When configured into the flexible photodetector, it also displays excellent self-powered photoresponse characteristic and excellent mechanical flexibility. This work paves the way for the development of high-performance flexible optoelectronic devices.

中文翻译：

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非晶Ga2O3纳米片智能柔性自供电近紫外光电探测器


近年来，薄型非晶GaO纳米片引起了介电和钝化材料的极大兴趣，但对其光电探测性能的研究仍缺乏。在这项工作中，非晶 GaO 纳米片从 Ga 固熔体表面剥离。通过选区电子衍射和X射线衍射验证了其非晶态特性。由于有限的吸收能力和丰富的缺陷态，非晶氧化镓纳米片光电探测器即使在偏置电压下也表现出低光电流和缓慢的响应时间。为了提高光电探测性能，选择在非晶GaO纳米片表面生长PbI纳米片。由于界面处存在内置电场，GaO/PbI 异质结光电探测器可以在 0 V 的偏置电压下工作，并具有 1.6 nA 的较大光电流和约 2 ms（上升时间）和 3 ms 的更快响应时间。毫秒（衰减时间）。当配置成柔性光电探测器时，它还表现出优异的自供电光响应特性和优异的机械柔性。这项工作为高性能柔性光电器件的开发铺平了道路。