A vertical cavity surface emitting laser (VCSEL) quick fabrication (VQF) process is applied to epitaxial materials designed for miniature atomic clock applications (MACs). The process is used to assess material quality and uniformity of a full 100 mm (4-inch) wafer against the stringent target specification of VCSELs for MACs. Target specifications in optical power (>0.6 mW) and differential efficiencies (<0.5 W/A) are achieved over large portions of a wafer; however, the variation in the oxide aperture diameter is shown to limit the yield. The emission of the fundamental mode at 894.6 nm at 70 $℃$ is met over a significant area of the wafer for ∼4 $\mu$ m aperture multi-mode devices. The consideration of the on-wafer variation reveals that further optimisation is required to increase the device yield to levels required for volume manufacture.

中文翻译：

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用于微型原子钟应用的 894.6 nm 波长外延材料的 VCSEL 快速制造

垂直腔面发射激光器 (VCSEL) 快速制造 (VQF) 工艺应用于为微型原子钟应用 (MAC) 设计的外延材料。该工艺用于根据用于 MAC 的 VCSEL 的严格目标规范评估整个 100 毫米（4 英寸）晶圆的材料质量和均匀性。光功率 (>0.6 mW) 和微分效率 (<0.5 W/A) 的目标规格在晶圆的大部分上实现；然而，氧化物孔径的变化显示出限制产量。70 时 894.6 nm 的基模发射$℃$在晶圆的一个重要区域上满足 ∼4$\mu$m 孔径多模器件。对晶圆上变化的考虑表明，需要进一步优化才能将器件产量提高到批量生产所需的水平。