Improved Performance of HfxZnyO-Based RRAM and its Switching Characteristics down to 4 K Temperature,Advanced Electronic Materials

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Improved Performance of HfxZnyO-Based RRAM and its Switching Characteristics down to 4 K Temperature
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2023-01-29 , DOI: 10.1002/aelm.202201250
Jun Lan ₁ , Zhixiong Li _{1,

2} , Zhenjie Chen ₁ , Quanzhou Zhu ₁ , Wenhui Wang ₁ , Muhammad Zaheer ₁ , Jiqing Lu ₁ , Jinxuan Liang ₃ , Mei Shen ₃ , Peng Chen ₁ , Kai Chen ₁ , Guobiao Zhang ₁ , Zhongrui Wang ₄ , Feichi Zhou ₁ , Longyang Lin ₁ , Yida Li ₁

Affiliation

The search for high-performance resistive random-access memory (RRAM) devices is essential to pave the way for highly efficient non-Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn-doped HfO_x-based resistive random-access memory (HfZnO RRAM), with improved performance. As compared with HfO_x RRAM, the HfZnO RRAM exhibits reduced switching voltages (>20%) and switching energy (>3×), as well as better uniformity both in voltages and resistance states. Furthermore, the HfZnO RRAM exhibits stable retention exceeding 10 years, as well as write/erase endurance exceeding 10⁵ cycles. In addition, excellent linearity and repeatability of conductance tuning can be achieved using the constant voltage pulse scheme, achieving ≈90% accuracy in a simulated multi-layer perceptron network for the recognition of modified national institute of standards and technology database handwriting. The HfZnO RRAM is also characterized down to the temperature of 4 K, showing functionality and the elucidation of its carrier conduction mechanism. Hence, a potential pathway for doped-RRAM to be used in a wide range of temperatures including quantum computing and deep-space exploration is shown.

中文翻译：

基于 HfxZnyO 的 RRAM 的改进性能及其低至 4 K 温度的开关特性

寻找高性能电阻式随机存取存储器 (RRAM) 设备对于为高效的非冯诺依曼计算架构铺平道路至关重要。在这里，报道了一种使用原子层沉积的合金化方法，用于基于 Zn 掺杂的 HfO _x的电阻式随机存取存储器 (HfZnO RRAM)，具有改进的性能。与 HfO _x RRAM 相比，HfZnO RRAM 具有更低的开关电压 (>20%) 和开关能量 (>3×)，以及电压和电阻状态的均匀性更好。此外，HfZnO RRAM 表现出超过 10 年的稳定性保持，以及超过 10 ^{5的写入/擦除耐久性} 周期。此外，使用恒定电压脉冲方案可以实现电导调谐的出色线性度和可重复性，在模拟多层感知器网络中实现≈90% 的准确度，用于识别修改后的国家标准和技术研究所数据库手写体。HfZnO RRAM 的特征还包括低至 4 K 的温度，显示了功能并阐明了其载流子传导机制。因此，显示了掺杂 RRAM 用于广泛温度范围（包括量子计算和深空探索）的潜在途径。

更新日期：2023-01-29

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