This study proposes a β-Ga₂O₃ pn tunneling diode (PNT-diode) in which the p-type region is obtained by sputtering a thin NiO_x layer in the pure argon atmosphere. The diode exhibits good characteristics: a high current density of 1530 A cm⁻² at 10 V and a low specific on-resistance of 0.56 mΩ cm². Moreover, its breakdown voltage of is about four times compared to a conventional diode, and its Baliga's figure of merit (BFOM) is as high as 3.25 GW cm⁻². Ni/NiO_x diodes are simulated by Silvaco simulation software to investigate the physical mechanism of the low specific on-resistance of the PNT-diode, and the results demonstrate that Ni and NiO_x can form a reverse diode, and that PNT-diode is equivalent to the Ni/NiO_x reverse diode and the NiO_x/β-Ga₂O₃ forward diode connected in series. Finally, the electric field distribution of the PNT-diode is simulated, and it is found that p-type NiO_x can significantly reduce the peak electric field at the anode edge.

中文翻译：

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低比导通电阻β-Ga2O3 PN隧道二极管的物理机制

本研究提出了一种β -Ga ₂ O ₃ pn 隧道二极管（PNT 二极管），其中 p 型区域是通过在纯氩气氛中溅射薄 NiO _{x层获得的。}^{该二极管表现出良好的特性：在 10 V 时具有 1530 A cm -2}的高电流密度和 0.56 mΩ cm ²的低比导通电阻。此外，其击穿电压约为传统二极管的四倍，其Baliga品质因数（BFOM）高达3.25 GW cm ^-2。镍/镍_氧化物利用Silvaco仿真软件对二极管进行仿真，研究PNT二极管低比导通电阻的物理机制，结果表明Ni和NiO x 可以_形成反向二极管，PNT二极管等效于Ni /NiO _x反向二极管与NiO _x / β -Ga ₂ O ₃正向二极管串联。最后，模拟了PNT二极管的电场分布，发现p型NiO _x可以显着降低阳极边缘的峰值电场。