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Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook
ACS Nano ( IF 15.8 ) Pub Date : 2023-01-19 , DOI: 10.1021/acsnano.2c10737 Jun-Young Kim 1 , Xin Ju 1 , Kah-Wee Ang 1, 2 , Dongzhi Chi 1
ACS Nano ( IF 15.8 ) Pub Date : 2023-01-19 , DOI: 10.1021/acsnano.2c10737 Jun-Young Kim 1 , Xin Ju 1 , Kah-Wee Ang 1, 2 , Dongzhi Chi 1
Affiliation
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Two-dimensional materials (2DMs) have attracted a great deal of interest due to their immense potential for scientific breakthroughs and technological innovations. While some 2D transition metal dichalcogenides (TMDC) such as MoS2 and WS2 are considered as the ultimate channel materials in unltrascaled transistors as replacements for Si, there has also been increasing interest in the monolithic 3D integration of 2DMs on the Si CMOS platform or in flexible electronics as back-end-of-line transistors, memory devices/selectors, and sensors, taking advantage of 2DM properties such as a high current driving capability with low leakage current, nonvolatile switching characteristics, a large surface-to-volume ratio, and a tunable bandgap. However, the realization of both of these scenarios critically depends on the development of manufacturing-viable high-yield 2DM layers transfer from the growth substrate to the Si, since the growth of high-quality 2DM layers often requires a high-temperature growth process on template substrates. Motivated by this, extensive efforts have been made by the 2DM research community to develop various 2DM layer transfer methods, leveraging the van der Waals transfer capability of the layer-structured 2DMs. These efforts have led to a number of successful demonstrations of wafer-scale 2D TMDC layer transfer, while 2DM-enabled template growth/transfer of some functional bulk materials such as III–V, Ge, and AlN has also been demonstrated. This review surveys and compares different 2DM transfer methods developed recently, with a focus on large-area 2D TMDC film transfer along with an introduction of 2DM template-assisted van der Waals growth/transfer of non-2D thin films. We will also briefly present an outlook of our envisioned multifunctionalities in 3D integrated electronic systems enabled by monolithic 3D integration of 2DMs and III–V via van der Waals transfer and discuss possible technology options for overcoming remaining challenges.
中文翻译：
用于单片 3D 电子系统集成的 2D 材料的范德华层转移：回顾与展望
二维材料 (2DM) 因其在科学突破和技术创新方面的巨大潜力而备受关注。而一些二维过渡金属二硫化物 (TMDC)，如 MoS 2和 WS 2被认为是替代 Si 的超大规模晶体管中的最终通道材料，人们也越来越关注 2DM 在 Si CMOS 平台上的单片 3D 集成，或者在柔性电子产品中作为后端线晶体管、存储设备/选择器和传感器，利用 2DM 特性，例如具有低漏电流的高电流驱动能力、非易失性开关特性、大表面体积比和可调带隙。然而，这两种情况的实现都关键取决于从生长衬底到 Si 转移制造可行的高产率 2DM 层的发展，因为高质量 2DM 层的生长通常需要高温生长过程模板底物。以此为动力，2DM 研究社区已经做出广泛的努力来开发各种 2DM 层传输方法，利用层结构 2DM 的范德瓦尔斯传输能力。这些努力导致了一些晶圆级 2D TMDC 层转移的成功演示，同时一些功能性块状材料（如 III-V、Ge 和 AlN）的 2DM 启用模板生长/转移也得到了演示。本综述调查和比较了最近开发的不同 2DM 转移方法，重点关注大面积 2D TMDC 薄膜转移以及 2DM 模板辅助范德华生长/非二维薄膜转移的介绍。
更新日期：2023-01-19
中文翻译：
用于单片 3D 电子系统集成的 2D 材料的范德华层转移：回顾与展望
二维材料 (2DM) 因其在科学突破和技术创新方面的巨大潜力而备受关注。而一些二维过渡金属二硫化物 (TMDC)，如 MoS 2和 WS 2被认为是替代 Si 的超大规模晶体管中的最终通道材料，人们也越来越关注 2DM 在 Si CMOS 平台上的单片 3D 集成，或者在柔性电子产品中作为后端线晶体管、存储设备/选择器和传感器，利用 2DM 特性，例如具有低漏电流的高电流驱动能力、非易失性开关特性、大表面体积比和可调带隙。然而，这两种情况的实现都关键取决于从生长衬底到 Si 转移制造可行的高产率 2DM 层的发展，因为高质量 2DM 层的生长通常需要高温生长过程模板底物。以此为动力，2DM 研究社区已经做出广泛的努力来开发各种 2DM 层传输方法，利用层结构 2DM 的范德瓦尔斯传输能力。这些努力导致了一些晶圆级 2D TMDC 层转移的成功演示，同时一些功能性块状材料（如 III-V、Ge 和 AlN）的 2DM 启用模板生长/转移也得到了演示。本综述调查和比较了最近开发的不同 2DM 转移方法，重点关注大面积 2D TMDC 薄膜转移以及 2DM 模板辅助范德华生长/非二维薄膜转移的介绍。
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