AlOx 和 Al-Silicate 的区域选择性沉积，用于完全自对准的通孔集成,ACS Applied Materials & Interfaces

当前位置： X-MOL 学术 › ACS Appl. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

AlOx 和 Al-Silicate 的区域选择性沉积，用于完全自对准的通孔集成
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-01-17 , DOI: 10.1021/acsami.2c18014
Mattia Pasquali _{1,

2} , Anita Brady-Boyd _{2,

3} , Alicja Leśniewska ₂ , Patrick Carolan ₂ , Thierry Conard ₂ , Robert O'Connor ₃ , Stefan De Gendt _{1,

2} , Silvia Armini ₂

Affiliation

对性能更好的电子产品的热潮，以及严重依赖“自上而下”图案化技术的制造工艺，使得区域选择性沉积 (ASD) 等“自对准”制造方法的集成成为了关键目标持续的设备缩放。完全自对准通孔 (FSAV) 方案被广泛提议作为“杀手级应用”来确定 ASD 是否可以从研发过程转向大批量制造。然而，缺乏合适的低 κ 沉积工艺阻碍了电介质对电介质 ASD 实现 FSAV。这主要是由于在低 κ 电介质沉积过程中使用的高温和/或强氧化剂，以及它们在有机掩膜存在下的不适用性，例如自组装单层膜 (SAM)，用于防止 ASD 过程中的材料成核。_研究了x和硅酸铝原子层沉积 (ALD) 工艺，以为支持 ASD 的 FSAV 提供合适的材料。二甲基异丙醇铝和 H_{2 O 用于沉积金属氧化物，而通过向 AlO}_x ALD 循环中添加 2,2-二甲氧基-1,6-二氮杂-2-硅杂环辛烷 (DMDAcO) 脉冲来生长硅酸铝这种工艺的选择性在 50 nm Cu/SiO₂结构上得到证明，使用十八烷硫醇衍生的 SAM 来抑制金属线上的材料成核。扫描和透射电子显微镜用于评估 ASD 过程的质量，并研究非生长表面缺陷生成背后的机制。X 射线光电子能谱测量表明 Al2O3 的纯度很高_x膜，而观察到 DMDAcO-配体掺入铝硅酸盐基质中。平面电容器结构用于评估两种 ASD 薄膜的电气特性，表明硅酸盐薄膜具有相对较低的 κ 值 (5.3 ± 0.2)、高加速场因子 (32.4 ± 1.4) 和介电击穿电压为100 °C 时为 6.0 ± 0.3 V。

"点击查看英文标题和摘要"

Area-Selective Deposition of AlOx and Al-Silicate for Fully Self-Aligned Via Integration

The rush for better-performing electronics, and manufacturing processes that heavily rely on “top-down” patterning techniques, is making the integration of “self-aligned” fabrication methods, such as area-selective deposition (ASD), a critical objective for continued device scaling. The fully self-aligned via (FSAV) scheme is broadly proposed as a “killer application” to determine whether ASD can shift from an R&D process to high-volume manufacturing. Nevertheless, the lack of a suitable low-κ deposition process has prevented the realization of FSAV by dielectric-on-dielectric ASD. This is primarily due to the high temperature and/or strong oxidizers employed during low-κ dielectric deposition and their unsuitability in the presence of organic masks, such as self-assembled monolayers (SAMs), used to prevent material nucleation during ASD. In this work, AlO_x and Al-silicate atomic layer deposition (ALD) processes are studied to provide suitable materials for ASD-enabled FSAV. Dimethylaluminum isopropoxide and H₂O are utilized to deposit the metal oxide, whereas Al-silicate is grown by adding 2,2-dimethoxy-1,6-diaza-2-silacyclooctane (DMDAcO) pulses to the AlO_x ALD cycle. The selectivity of such processes is demonstrated on 50 nm Cu/SiO₂ structures, using octadecanethiol-derived SAMs to inhibit material nucleation on the metal lines. Scanning and transmission electron microscopies are employed to assess the quality of the ASD processes and investigate the mechanisms behind defect generation on a nongrowth surface. X-ray photoelectron spectroscopy measurements show the high purity of the AlO_x film, whereas DMDAcO-ligand incorporation into the Al-silicate matrix is observed. Planar capacitor structures are used to assess the electrical properties of both ASD films, revealing that the silicate film exhibits a relatively low κ-value (5.3 ± 0.2), with a high acceleration field factor (32.4 ± 1.4) and a dielectric breakdown voltage of 6.0 ± 0.3 V at 100 °C.

更新日期：2023-01-17

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南