Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP2S6 via In-Plane Ionic Migration,ACS Nano

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Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP2S6 via In-Plane Ionic Migration
ACS Nano ( IF 15.8 ) Pub Date : 2023-01-12 , DOI: 10.1021/acsnano.2c09280
Huanfeng Zhu _{1,

2} , Jialin Li ₁ , Qiang Chen ₁ , Wei Tang ₁ , Xinyi Fan ₁ , Fan Li ₁ , Linjun Li _{1,

2}

Affiliation

As basic building blocks for next-generation information technologies devices, high-quality p-n junctions based on van der Waals (vdW) materials have attracted widespread interest. Compared to traditional two-dimensional (2D) heterojunction diodes, the emerging homojunctions are more attractive owing to their intrinsic advantages, such as continuous band alignments and smaller carrier trapping. Here, utilizing the long-range migration of Cu⁺ ions under an in-plane electric field, a lateral p-n homojunction was constructed in the 2D layered copper indium thiophosphate (CIPS). The symmetric Au/CIPS/Au devices demonstrate an electric-field-driven resistance switching (RS) accompanied by a rectification behavior without any gate control. Moreover, such rectification behavior can be continuously modulated by poling voltage. We deduce that the reversable rectifying RS behavior is governed by the effective lateral build-in potential and the change of the interfacial barrier during the poling process. Furthermore, the CIPS p-n homojuction is evidenced by the photovoltaic effect, with the spectral response extending up to the visible region due to the better photogenerated carrier separation efficiency. Therefore, this work provides a facile route to fabricate homojunctions through electric-field-driven ionic migration.

中文翻译：

通过面内离子迁移在二维层状 CuInP2S6 中形成高度可调横向同质结

作为下一代信息技术设备的基本构建模块，基于范德华 (vdW) 材料的高质量p - n结引起了广泛的兴趣。与传统的二维（2D）异质结二极管相比，新兴的同质结由于其固有的优势（例如连续的能带排列和更小的载流子捕获）而更具吸引力。在此，利用面内电场下Cu ⁺离子的长程迁移，在二维层状硫代磷酸铜铟（CIPS）中构建了横向p - n同质结。对称 Au/CIPS/Au 器件展示了电场驱动的电阻开关 (RS)，并伴随着无需任何栅极控制的整流行为。此外，这种整流行为可以通过极化电压连续调制。我们推断，可逆整流 RS 行为是由有效横向内置电势和极化过程中界面势垒的变化控制的。此外，光伏效应证明了CIPS p - n同质结，由于更好的光生载流子分离效率，光谱响应延伸至可见光区域。因此，这项工作提供了一种通过电场驱动的离子迁移来制造同质结的简便途径。

更新日期：2023-01-12

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