通过机电耦合降低超薄二维 CuInP2S6 铁电体中铁电畴转换的阈值,The Journal of Physical Chemistry Letters

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通过机电耦合降低超薄二维 CuInP2S6 铁电体中铁电畴转换的阈值
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2023-01-09 , DOI: 10.1021/acs.jpclett.2c03628
Weijie Yang ₁ , Shengjie Chen ₁ , Xiangdong Ding ₁ , Jun Sun ₁ , Junkai Deng ₁

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室温平面外二维铁电体在小型化非易失性存储设备中具有广阔的应用前景。极化切换的可行操作显着影响铁电体的存储性能。然而，传统的高压诱导极化切换不可避免地会产生电荷注入或电击穿，而大机械载荷诱导的极化切换可能会损坏铁电体的结构。因此，非常需要降低铁电极化反转的临界电压/负载。在此，使用原子力显微镜实验，通过电场和机械加载证明了超薄（~4.1 nm）CuInP ₂ S _{6的铁电畴转换}纳米薄片。极化切换的相关阈值电压/负载为 ∼ –5 V/1095 nN，分别由电场和挠曲电效应产生。最后，采用机电耦合来显着降低 CuInP ₂ S ₆的阈值电压/负载。这可以用 Landau-Ginzburg-Devonshire 双井模型来解释。这种轻松调整 CuInP ₂ S ₆偏振态的有效方法为机械写入和电擦除存储设备开辟了新前景。

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Reducing Threshold of Ferroelectric Domain Switching in Ultrathin Two-Dimensional CuInP2S6 Ferroelectrics via Electrical–Mechanical Coupling

Room-temperature out-of-plane two-dimensional ferroelectrics have promising applications in miniaturized non-volatile memory appliances. The feasible manipulation of polarization switching significantly influences the memory performance of ferroelectrics. However, conventional high-voltage-induced polarization switching inevitably generates charge injection or electric breakdown, and large-mechanical-loading-induced polarization switching may damage the structure of ferroelectrics. Hence, decreasing critical voltage/loading for ferroelectric polarization reversal is highly required. Herein, using atomic force microscopy experiments, the ferroelectric domain switching via both electric field and mechanical loading was demonstrated for an ultrathin (∼4.1 nm) CuInP₂S₆ nanoflake. The relevant threshold voltage/loading for polarization switching was ∼ –5 V/1095 nN, resulting from the electric field and flexoelectric effect, respectively. Finally, the electrical–mechanical coupling was adopted to reduce the threshold voltage/loading of CuInP₂S₆ significantly. It can be explained by the Landau–Ginzburg–Devonshire double-well model. This effective way for easily tuning the polarization states of CuInP₂S₆ opens up new prospects for mechanically written and electrically erased memory devices.

更新日期：2023-01-09

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