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Novel (1-x)NaNbO3-xBi2/3HfO3 based, lead-free compositions with stable antiferroelectric phase and high energy density and switching field
Chemical Engineering Journal ( IF 13.3 ) Pub Date : 2023-01-07 , DOI: 10.1016/j.cej.2023.141376
Lei Zhang , Yongping Pu , Min Chen , Yu Shi , Jing Shang , Yongqiang Yang , Dan Zhao

Pulse power devices urgently need lead-free compositions with stable antiferroelectric phase and transition field. Following the guidance of the DFT (Density Functional Theory) calculation, a novel antiferroelectric composition (1-x)NaNbO3-xBi2/3HfO3(0≤ x ≤0.08), was designed and prepared, exhibiting well-documented double AFE loops both in macro and nanoscale. Furthermore, Bi2/3HfO3 modified compositions also exhibit a high stored energy density of 4.26 J/cm3, forward switching field of 225 kV/cm, large discharge current of 36 A, within 25 ns discharge time and high power density of 32 MW/cm3, which is superior to other NaNbO3-based compositions reported in antiferroelectric range. Structural analysis shows that the high temperature phases of P and R can be rapidly shifted to room temperature by adding Bi2/3HfO3. Combining results from the PFM and TEM, the modified compositions had a faster domain switching speed to the electric field. In addition, theoretical calculations demonstrated that modified compositions have a predictable increasing energy difference -7.48 meV/f.u. between AFE(antiferroelectric) and FE(ferroelectric) phase.



中文翻译:

新型 (1-x)NaNbO3-xBi2/3HfO3 基无铅组合物具有稳定的反铁电相和高能量密度和开关场

脉冲功率器件迫切需要具有稳定反铁电相和过渡场的无铅成分。在DFT(密度泛函理论)计算的指导下,设计并制备了一种新型反铁电组合物(1- x )NaNbO 3 - x Bi 2/3 HfO 3 (0≤ x ≤0.08),表现出良好的双AFE 在宏观和纳米尺度上循环。此外,Bi 2/3 HfO 3改性组合物还表现出4.26 J/cm 3的高储能密度、225 kV/cm的正向开关场、36 A的大放电电流、25 ns的放电时间和高功率密度。 32 兆瓦/厘米3,这优于在反铁电范围内报道的其他基于NaNbO 3的组合物。结构分析表明,通过添加Bi 2/3 HfO 3,P和R的高温相可以快速转移到室温。结合 PFM 和 TEM 的结果,改性组合物具有更快的电场转换速度。此外,理论计算表明,改性组合物在 AFE(反铁电)相和 FE(铁电)相之间具有可预测的增加能量差 -7.48 meV/fu。

更新日期:2023-01-07
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