光化学蚀刻 BiVO4 构建 BiVO4/BiOx 的不对称异质结显示出高效的光电化学水分解,Small Methods

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光化学蚀刻 BiVO4 构建 BiVO4/BiOx 的不对称异质结显示出高效的光电化学水分解
Small Methods ( IF 10.7 ) Pub Date : 2023-01-05 , DOI: 10.1002/smtd.202201611
Xiangtao Chen ₁ , Chao Zhen ₂ , Na Li ₁ , Nan Jia ₁ , Xiaoxiang Xu ₃ , Lianzhou Wang ₄ , Gang Liu _{2,

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Affiliation

BiVO ₄作为用于太阳能驱动的水氧化的光阳极的有前途的半导体候选者总是遭受电荷载流子传输性能差和光致自腐蚀。在此，通过有意利用光致自腐蚀过程，开发了一种可控的光化学蚀刻方法，以合理地构建多面 BiVO ₄晶体阵列的 BiVO ₄ /BiO _x不对称异质结光阳极。与BiVO ₄光电阳极相比，所得BiVO ₄ /BiO _x光电阳极的短路光电流密度提高了三倍以上（≈3.2 mA cm ^-2) 和 ≈75 mV 的光电流起始电位负移。这是由于形成了强相互作用的同源异质结，促进了光载流子分离并扩大了界面上的光电压。值得注意的是，即使在连续运行 12 小时后，光电流密度仍可以保持在 ≈2.0 mA cm ^{-2 ，而只有 ≈0.1 mA cm}^-2留给 BiVO ₄的控制光阳极。_{此外，对于 BiVO 4} /BiO _x光电阳极，水分解的法拉第效率被确定为接近 100% 。_{可控光化学刻蚀工艺可能为在其他与 BiVO 4}具有相似特性的光电极材料上构建同源异质结提供思路.

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Photochemically Etching BiVO4 to Construct Asymmetric Heterojunction of BiVO4/BiOx Showing Efficient Photoelectrochemical Water Splitting

BiVO₄ as a promising semiconductor candidate of the photoanode for solar driven water oxidation always suffers from poor charge carrier transport property and photo-induced self-corrosion. Herein, by intentionally taking advantage of the photo-induced self-corrosion process, a controllable photochemical etching method is developed to rationally construct a photoanode of BiVO₄/BiO_x asymmetric heterojunction from faceted BiVO₄ crystal arrays. Compared with the BiVO₄ photoanode, the resulting BiVO₄/BiO_x photoanode gains over three times enhancement in short-circuit photocurrent density (≈3.2 mA cm⁻²) and ≈75 mV negative shift of photocurrent onset potential. This is due to the formation of the strong interacted homologous heterojunction, which promotes photo-carrier separation and enlarges photovoltage across the interface. Remarkably, the photocurrent density can remain at ≈2.0 mA cm⁻² even after 12 h consecutive operation, while only ≈0.1 mA cm⁻² is left for the control photoanode of BiVO₄. Moreover, the Faraday efficiency for water splitting is determined to be nearly 100% for the BiVO₄/BiO_x photoanode. The controllable photochemical etching process may shed light on the construction of homologous heterojunction on other photoelectrode materials that have similar properties to BiVO₄.

更新日期：2023-01-05

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