AlN 和 AlGaN 夹层对金属有机化学气相沉积 AlScN/GaN 异质结构的影响,Crystal Growth & Design

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AlN 和 AlGaN 夹层对金属有机化学气相沉积 AlScN/GaN 异质结构的影响
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2023-01-05 , DOI: 10.1021/acs.cgd.2c01013
Isabel Streicher ₁ , Stefano Leone ₁ , Christian Manz ₁ , Lutz Kirste ₁ , Mario Prescher ₁ , Patrick Waltereit ₁ , Michael Mikulla ₁ , Rüdiger Quay _{1,

2} , Oliver Ambacher ₃

Affiliation

AlScN/GaN 异质结构在二维电子气 (2DEG) 中具有高载流子密度 ( n _s )，在高频和大功率电子领域具有很高的潜力。异质界面的陡峭性在 2DEG 限制中起着关键作用，中间层（AlN、AlGaN）的存在会影响n _s和电子迁移率 (μ) 并决定薄层电阻 ( R _sh). 适用于具有和不具有标称 AlN 中间层的高电子迁移率晶体管 (HEMT) 的 AlScN/GaN 异质结构通过金属有机化学气相沉积 (MOCVD) 生长，并在电气和结构上进行表征，以系统地了解无意形成和控制通过原子在异质界面的扩散分级 AlGaN 中间层。AlN 中间层将n _s从 2.52 × 10 ¹³ cm ^–2增加到 3.25 × 10 ¹³ cm ^–2并且，正如通过一维薛定谔-泊松模拟计算的那样，改进了 2DEG 限制。势垒生长温度在 900 °C 到 1200 °C 之间变化，以研究热预算对扩散的影响。在 900 °C 下的生长减少了渐变 AlGaN 中间层的厚度并改善了 2DEG 限制，导致R _sh为 211 Ω/sq，n _s为 2.98 × 10 ¹³ cm ^–2和 μ 为 998 cm ² /(Vs) .

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Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

AlScN/GaN heterostructures with their high sheet carrier density (n_s) in the two-dimensional electron gas (2DEG) have a high potential for high-frequency and high-power electronics. The abruptness of the heterointerface plays a key role in the 2DEG confinement, and the presence of interlayers (AlN, AlGaN) affects n_s and electron mobility (μ) and determines the sheet resistance (R_sh). AlScN/GaN heterostructures suitable for high-electron mobility transistors (HEMT) with and without a nominal AlN interlayer were grown by metal–organic chemical vapor deposition (MOCVD) and characterized electrically and structurally to gain a systematic insight into the unintentional formation and control of graded AlGaN interlayers by diffusion of atoms at the heterointerface. The AlN interlayer increases n_s from 2.52 × 10¹³ cm^–2 to 3.25 × 10¹³ cm^–2 and, as calculated by one-dimensional Schrödinger–Poisson simulations, improves the 2DEG confinement. The barrier growth temperature was varied from 900 °C to 1200 °C to investigate the effect of the thermal budget on diffusion. Growth at 900 °C reduces the thickness of the graded AlGaN interlayer and improves the 2DEG confinement, leading to R_sh of 211 Ω/sq, n_s of 2.98 × 10¹³ cm^–2, and μ of 998 cm²/(Vs).

更新日期：2023-01-05

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