Being capable of sensing broadband infrared (IR) light is vitally important for wide-ranging applications from fundamental science to industrial purposes. Two-dimensional (2D) topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation. However, the low charge separation efficiency, high noise level, and on-chip integration difficulty of these semimetals significantly hinder their further technological applications. Here, we demonstrate a facile thermal-assisted tellurization route for the van der Waals (vdW) growth of wafer-scale phase-controlled 2D MoTe₂ layers. Importantly, the type-II Weyl semimetal 1T′-MoTe₂ features a unique orthorhombic lattice structure with a broken inversion symmetry, which ensures efficient carrier transportation and thus reduces the carrier recombination. This characteristic is a key merit for the well-designed 1T′-MoTe₂/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6 µm and a large room temperature specific detectivity of over 10⁸ Jones in the mid-infrared (MIR) range. Moreover, the large-area synthesis of 2D MoTe₂ layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device array. This work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.

能够感测宽带红外 (IR) 光对于从基础科学到工业目的的广泛应用至关重要。二维 (2D) 拓扑半金属因其无间隙电子结构和线性能量色散关系而被广泛用于宽带红外检测。然而，这些半金属的低电荷分离效率、高噪声水平和片上集成难度极大地阻碍了它们进一步的技术应用。_{在这里，我们展示了一种用于晶圆级相控 2D MoTe 2}层的范德华 (vdW) 生长的简易热辅助碲化途径。重要的是，II 型外尔半金属 1T'-MoTe ₂具有独特的正交晶格结构，反转对称性破缺，确保有效的载流子传输，从而减少载流子复合。这一特性是精心设计的 1T'-MoTe ₂ /Si 垂直肖特基结光电探测器的关键优点，可实现高达 10.6 µm 的超宽带检测范围和超过 10 8^琼斯的大室温检测率。中红外 (MIR) 范围。_{此外，二维 MoTe 2}层的大面积合成能够通过使用集成器件阵列展示高分辨率非制冷 MIR 成像能力。这项工作提供了一种基于二维材料组装非制冷红外光电探测器的新方法。