Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface,ACS Applied Electronic Materials

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Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2022-12-28 , DOI: 10.1021/acsaelm.2c01553
Jiahui Ma _{1,

2} , Ning Xu _{1,

2,

3,

4} , Yuxin Luo _{1,

2} , Yu Lin _{1,

2} , Yongping Pu _{1,

2}

Affiliation

The polishing activity of CeO₂ abrasives is enhanced by improving the Ce³⁺ concentration on their surface. In this study, a series of Ce_1–xLa_xO₂ abrasives with different La³⁺ doping were prepared. The abrasives were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The effects of La³⁺ doping on the morphology, size, and Ce³⁺ concentration of the abrasives were studied. The morphology of the particles changes from sphere to octahedron with the La³⁺ doping. The lattice expansion of the CeO₂ crystal after La³⁺ doping also significantly improves the Ce³⁺ concentration on the abrasive surface. However, the Ce³⁺ concentration on the surface gradually became saturated when the x was 0.2 or more. The polishing performance proved that the material removal rate (MRR) is closely related to the Ce³⁺ concentration generated by La³⁺ doping. The MRR of pure CeO₂ abrasives with a Ce³⁺ concentration of 20.53% on a SiO₂ substrate is 59.31 nm/min, while the Ce_0.7La_0.3O₂ abrasives with the Ce³⁺ concentration increased to 34.41% achieved 101.12 nm/min. The polished surface quality was characterized by atomic force microscopy, which shows improved roughness of all samples. Furthermore, the differences in the removal rate of Ce³⁺ and Ce⁴⁺ in CeO₂-based abrasives on the SiO₂ substrate were also discussed.

中文翻译：

通过提高 Ce3+ 表面浓度提高 CeO2 磨料在 SiO2 基体上的抛光效率

_{CeO 2}磨料的抛光活性通过提高其表面的Ce ^{3+浓度而增强。}在本研究中，制备了一系列具有不同La ³⁺掺杂的Ce _{1– x} La _x O ₂磨料。通过X射线衍射、扫描电子显微镜、透射电子显微镜、拉曼光谱和X射线光电子能谱对磨料进行了表征。研究了La ³⁺掺杂对磨料形貌、尺寸和Ce ³⁺浓度的影响。^{随着La 3+}掺杂，颗粒的形貌从球形变为八面体。CeO的晶格膨胀La ^{3+掺杂后的}₂晶体也显着提高了磨料表面的Ce ^3+浓度。但是，当x为0.2以上时，表面的Ce ³⁺浓度逐渐饱和。抛光性能证明材料去除率(MRR)与La ³⁺掺杂产生的Ce ^{3+浓度密切相关。}^{Ce 3+}浓度为 20.53%的纯 CeO ₂磨料在 SiO ₂基底上的 MRR 为 59.31 nm/min，而Ce ^{3+的 Ce}_0.7 La _0.3 O ₂磨料浓度增加到 34.41% 达到 101.12 nm/min。抛光表面质量通过原子力显微镜表征，显示所有样品的粗糙度均有所改善。此外，还讨论了CeO ₂基磨料在SiO _2基体上Ce³⁺和Ce ⁴⁺去除率的差异。

更新日期：2022-12-28

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