具有不同米勒指数的低对称性邻位 Au(101) 面上外延生长高质量单层 MoS2 单晶,ACS Nano

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具有不同米勒指数的低对称性邻位 Au(101) 面上外延生长高质量单层 MoS2 单晶
ACS Nano ( IF 15.8 ) Pub Date : 2022-12-27 , DOI: 10.1021/acsnano.2c07978
Jingyi Hu _{1,

2} , Wenzhi Quan _{1,

2} , Pengfei Yang _{1,

2} , Fangfang Cui ₂ , Fachen Liu _{1,

3,

4} , Lijie Zhu ₂ , Shuangyuan Pan ₂ , Yahuan Huan ₂ , Fan Zhou _{1,

2} , Jiatian Fu ₂ , Guanhua Zhang ₅ , Peng Gao _{1,

3,

4} , Yanfeng Zhang _{1,

2}

Affiliation

晶圆级单层半导体过渡金属二硫化物单晶的外延生长对于推进其在下一代晶体管和高度集成电路中的应用至关重要。_{在高对称性 Au(111) 和蓝宝石衬底上生长单层 MoS 2}单晶已经做出了一些努力，但仍需要发现更多原型生长系统以阐明其内部机制。在此，我们报告了单向排列的单层 MoS ₂畴和单晶薄膜在低对称性 Au(101) 邻位面上的外延生长一种简便的化学气相沉积方法。现场扫描隧道显微镜观察揭示了沿 Au(101) 的 [101̅] 台阶边缘及其垂直方向形成了特定的矩形莫尔图案。_{提出了 MoS 2} /Au(101) 沿衬底高对称方向（即Au[101̅]、Au [010]）的完美晶格常数匹配以及阶梯边缘引导效应，以促进稳健的外延. 多尺度表征进一步证实了由单向对齐的单层畴合并的单层 MoS _{2薄膜的无畴边界特征。}本工作据此提出了一种用于直接合成单层MoS _{2的对称错配外延体系}单晶，这将加深我们对二维层状材料外延的理解，并推动其在各个领域的应用。

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Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

Epitaxial growth of wafer-scale monolayer semiconducting transition metal dichalcogenide single crystals is essential for advancing their applications in next-generation transistors and highly integrated circuits. Several efforts have been made for the growth of monolayer MoS₂ single crystals on high-symmetry Au(111) and sapphire substrates, while more prototype growth systems still need to be discovered for clarifying the internal mechanisms. Herein, we report the epitaxial growth of unidirectionally aligned monolayer MoS₂ domains and single-crystal films on low-symmetry Au(101) vicinal facets via a facile chemical vapor deposition method. On-site scanning tunneling microscopy observations reveal the formation of a specific rectangular Moiré pattern along the [101̅] step edge of Au(101) and along its perpendicular direction. The perfect lattice constant matching of MoS₂/Au(101) along the substrate high-symmetry directions (i.e., Au[101̅], Au [010]) as well as the step-edge-guiding effect are proposed to facilitate the robust epitaxy. Multiscale characterizations further confirm the domain-boundary-free feature of the monolayer MoS₂ films merged by unidirectionally aligned monolayer domains. This work hereby puts forward a symmetry mismatched epitaxial system for the direct synthesis of monolayer MoS₂ single crystals, which should deepen our understanding about the epitaxy of 2D layered materials and propel their applications in various fields.

更新日期：2022-12-27

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