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Unlocking the Full Potential of Electron-Acceptor Molecules for Efficient and Stable Hole Injection
Advanced Materials ( IF 27.4 ) Pub Date : 2022-12-26 , DOI: 10.1002/adma.202210413
Taku Oono 1 , Takuya Okada 1 , Tsubasa Sasaki 1 , Kaito Inagaki 2 , Takuma Ushiku 2 , Takahisa Shimizu 1 , Takuji Hatakeyama 3 , Hirohiko Fukagawa 1
Affiliation  

Understanding the hole-injection mechanism and improving the hole-injection property are of pivotal importance in the future development of organic optoelectronic devices. Electron-acceptor molecules with high electron affinity (EA) are widely used in electronic applications, such as hole injection and p-doping. Although p-doping has generally been studied in terms of matching the ionization energy (IE) of organic semiconductors with the EA of acceptor molecules, little is known about the effect of the EA of acceptor molecules on the hole-injection property. In this work, the hole-injection mechanism in devices is completely clarified, and a strategy to optimize the hole-injection property of the acceptor molecule is developed. Efficient and stable hole injection is found to be possible even into materials with IEs as high as 5.8 eV by controlling the charged state of an acceptor molecule with an EA of about 5.0 eV. This excellent hole-injection property enables direct hole injection into an emitting layer, realizing a pure blue organic light-emitting diode with an extraordinarily low turn-on voltage of 2.67 V, a power efficiency of 29 lm W−1, an external quantum efficiency of 28% and a Commission Internationale de l'Eclairage y coordinate of less than 0.10.

中文翻译:

释放电子受体分子的全部潜力,实现高效稳定的空穴注入

了解空穴注入机制和提高空穴注入性能对于有机光电器件的未来发展至关重要。具有高电子亲和力 (EA) 的电子受体分子广泛用于电子应用,例如空穴注入和 p 掺杂。尽管通常根据有机半导体的电离能 (IE) 与受体分子的 EA 匹配来研究 p 掺杂,但关于受体分子的 EA 对空穴注入特性的影响知之甚少。在这项工作中,器件中的空穴注入机制得到了彻底阐明,并开发了一种优化受体分子空穴注入特性的策略。研究发现,即使在 IE 高达 5 的材料中,也可以实现高效稳定的空穴注入。通过用约 5.0 eV 的 EA 控制受体分子的带电状态,达到 8 eV。这种优异的空穴注入特性使得空穴可以直接注入到发光层中,实现了纯蓝色有机发光二极管,具有 2.67 V 的超低开启电压,功率效率为 29 lm W-1,28 %的外部量子效率和小于0.10的Commission Internationale de l'Eclairage y坐标。
更新日期:2022-12-26
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