Strongly bound excitons in atomically thin transition metal dichalcogenides offer many opportunities to reveal the underlying physics of basic quasiparticles and many-body effects in the two-dimensional (2D) limit. Comprehensive reflection investigation on band-edge exciton transitions is essential to exploring wealthy light-matter interactions in the emerging 2D semiconductors, whereas angle-resolved reflection (ARR) characteristics of intralayer and interlayer excitons in 2D MoS₂ layers remain unclear. Herein, we report ARR spectroscopic features of A, B, and interlayer excitons in monolayer (ML) and bilayer (BL) MoS₂ on three kinds of photonic substrates, involving distinct exciton-photon interactions. In a BL MoS₂ on a protected silver mirror, the interlayer exciton with one-third amplitude of A exciton appears at 0.05 eV above the A exciton energy, exhibiting an angle-insensitive energy dispersion. When ML and BL MoS₂ lie on a SiO₂-covered silicon, the broad trapped-photon mode weakly couples with the reflection bands of A and B excitons by the Fano resonance effect, causing the asymmetric lineshapes and the redshifted energies. After transferring MoS₂ layers onto a one-dimensional photonic crystal, two high-lying branches of B-exciton polaritons are formed by the interactions between B excitons and Bragg photons, beyond the weak-coupling regime. This work provides ARR spectral benchmarks of A, B, and interlayer excitons in ML and BL MoS₂, gaining insights into the interpretation of light-matter interactions in 2D semiconductors and the design of their devices for practical photonic applications.

原子级薄的过渡金属二硫化物中的强束缚激子提供了许多机会来揭示二维 (2D) 极限中基本准粒子和多体效应的基本物理学。带边激子跃迁的综合反射研究对于探索新兴二维半导体中丰富的光-物质相互作用至关重要，而二维 MoS ₂层中层内和层间激子的角分辨反射 (ARR) 特性仍不清楚。在此，我们报告了三种光子基板上单层 (ML) 和双层 (BL) MoS ₂中 A、B 和层间激子的 ARR 光谱特征，涉及不同的激子-光子相互作用。在 BL MoS ₂在受保护的银镜上，具有 A 激子三分之一振幅的层间激子出现在 A 激子能量之上 0.05 eV，表现出对角度不敏感的能量色散。当 ML 和 BL MoS ₂位于 SiO ₂覆盖的硅上时，宽俘获光子模式通过法诺共振效应与 A 和 B 激子的反射带弱耦合，导致不对称线形和红移能量。将 MoS ₂层转移到一维光子晶体上后，B 激子和布拉格光子之间的相互作用形成了 B 激子极化子的两个高位分支，超出了弱耦合状态。这项工作提供了 A、B 和层间激子在 ML 和 BL MoS _{2中的 ARR 光谱基准}，深入了解二维半导体中光物质相互作用的解释及其用于实际光子应用的设备设计。