Surface-enhanced Raman scattering (SERS) has attracted extensive attention as an ultrasensitive detection method. However, the poor biocompatibility and expensive synthesis cost of noble metal SERS substrates have become non-negligible factors that limit the development of SERS technology. Metal chalcogenide semiconductors as an alternative to noble metal SERS substrates can avoid these disadvantages, but the enhancement effect is lower than that of noble metal substrates. Here, we report a method to co-modify MoS₂ by Ni and O, which improves the carrier concentration and mobility of MoS₂. The SERS effect of the modified MoS₂ is comparable to that of noble metals. We found that the improved SERS performance of MoS₂ can be attributed to the following two factors: strong interfacial dipole–dipole interaction and efficient charge transfer effect. During the doping process, the incorporation of Ni and O enhances the polarity and carrier concentration of MoS₂, enhances the interfacial interaction of MoS₂, and provides a basis for charge transfer. During the annealing process, the introduction of O atoms into the S defects reduces the internal defects of doped MoS₂, improves the carrier mobility, and promotes the efficient charge transfer effect of MoS₂. The final modified MoS₂ as a SERS substrate realizes low-concentration detection of bilirubin, cytochrome C, and trichlorfon. This provides promising guidance for the practical inspection of metal chalcogenide semiconductor substrates.

表面增强拉曼散射（SERS）作为一种超灵敏的检测方法引起了广泛的关注。然而，贵金属SERS基底生物相容性差、合成成本昂贵等问题已成为限制SERS技术发展的不可忽视的因素。金属硫族化物半导体作为贵金属SERS衬底的替代品可以避免这些缺点，但增强效果低于贵金属衬底。在这里，我们报告了一种通过 Ni 和 O 共同修饰 MoS _{2的方法，该方法提高了 MoS 2}的载流子浓度和迁移率。改性MoS ₂的SERS效应与贵金属相当。我们发现 MoS _{2的改进 SERS 性能}可归因于以下两个因素：强界面偶极 - 偶极相互作用和有效的电荷转移效应。在掺杂过程中，Ni和O的掺入增强了MoS 2 的极性和载流子浓度，增强了MoS _2的界面相互作用，为电荷转移提供了基础。在退火过程中，O原子在S缺陷中的引入减少了掺杂MoS ₂的内部缺陷，提高了载流子迁移率，促进了MoS ₂的高效电荷转移效应。最终修饰的MoS ₂作为SERS底物实现胆红素、细胞色素C的低浓度检测和敌百虫。这为金属硫族化物半导体基板的实际检测提供了有前途的指导。