基于 In2Se3/MoS2 异质结的柔性光学突触用于近红外范围内的人工视觉系统,ACS Applied Materials & Interfaces

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基于 In2Se3/MoS2 异质结的柔性光学突触用于近红外范围内的人工视觉系统
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-12-13 , DOI: 10.1021/acsami.2c19097
Yunxia Hu _{1,

2} , Hongying Yang _{1,

2} , Jingtao Huang ₁ , Xin Zhang ₂ , Biying Tan ₂ , Huiming Shang ₂ , Shichao Zhang ₂ , Wei Feng ₃ , Jingchuan Zhu ₁ , Jia Zhang ₂ , Yong Shuai ₄ , Dechang Jia ₁ , Yu Zhou ₁ , PingAn Hu _{1,

2}

Affiliation

近红外 (NIR) 突触装置集成了近红外光学灵敏度和突触可塑性，模拟了人类视觉系统的基本仿生功能，在近红外人工视觉系统中显示出巨大潜力。然而，缺乏用于 NIR 光电检测的具有适当带隙的半导体材料以及制造具有突触行为的器件的有效策略限制了 NIR 突触器件的进一步发展。_{在这里，构建了一个由 In 2} Se ₃ /MoS ₂异质结组成的两端 NIR 突触装置，它表现出基本的突触功能。_{In 2} Se ₃ /MoS ₂的缩小带隙和势垒异质结对于 NIR 突触可塑性至关重要。此外，系统地研究了In ₂ Se ₃ /MoS ₂异质结在应变下的近红外突触特性。_{In 2} Se ₃ /MoS ₂突触装置的 ΔEPSC 可以从无应变下的 38.4% 提高到 0.54% 应变下的 49.0%，在 100 mV 的 1060 nm 照明下持续 1 s。此外，由 10 × 10 In ₂ Se ₃ /MoS _{2组成的人工 NIR 视觉系统}器件阵列已经制作完成，在 NIR 照明下具有图像传感、学习和存储功能。这项研究为基于二维材料的柔性 NIR 突触设备的设计提供了新思路，并为人工智能和 NIR 视觉系统提供了许多机会。

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Flexible Optical Synapses Based on In2Se3/MoS2 Heterojunctions for Artificial Vision Systems in the Near-Infrared Range

Near-infrared (NIR) synaptic devices integrate NIR optical sensitivity and synaptic plasticity, emulating the basic biomimetic function of the human visual system and showing great potential in NIR artificial vision systems. However, the lack of semiconductor materials with appropriate band gaps for NIR photodetection and effective strategies for fabricating devices with synaptic behaviors limit the further development of NIR synaptic devices. Here, a two-terminal NIR synaptic device consisting of the In₂Se₃/MoS₂ heterojunction has been constructed, and it exhibits fundamental synaptic functions. The reduced band gap and potential barrier of In₂Se₃/MoS₂ heterojunctions are essential for NIR synaptic plasticity. In addition, the NIR synaptic properties of In₂Se₃/MoS₂ heterojunctions under strain have been studied systematically. The ΔEPSC of the In₂Se₃/MoS₂ synaptic device can be improved from 38.4% under no strain to 49.0% under a 0.54% strain with a 1060 nm illumination for 1 s at 100 mV. Furthermore, the artificial NIR vision system consisting of a 10 × 10 In₂Se₃/MoS₂ device array has been fabricated, exhibiting image sensing, learning, and storage functions under NIR illumination. This research provides new ideas for the design of flexible NIR synaptic devices based on 2D materials and presents many opportunities in artificial intelligence and NIR vision systems.

更新日期：2022-12-13

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