Silicon carbide is one of the major semiconductor materials used for manufacturing innovative power devices, especially for high power applications. Aluminum is the primary implant species that is used for p-type doping of silicon carbide (SiC) power transistors. Because there are no suitable aluminum gaseous dopant sources available for ion implant, the most common approach is to generate aluminum ions by installing a solid aluminum target inside the arc chamber. The solid target is then reacted, through physical and chemical mechanisms, by using argon and/or a fluoride containing gas. Presented here, we examine both aluminum oxide (Al₂O₃) and aluminum nitride (AlN) targets in combination with different co-gases to assess Al⁺ implantation performance. The gases tested include boron trifluoride (BF₃), phosphorus trifluoride (PF₃) as well as other fluoride gases and their mixtures. The performance factors characterized include aluminum beam current, beam spectra, and source conditions for each of the various options. This work concludes with a recommendation on the optimal solution for the aluminum implant application.

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中文翻译：

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铝离子注入的源材料、辅助气体和方法的研究

碳化硅是用于制造创新功率器件的主要半导体材料之一，尤其适用于高功率应用。铝是用于碳化硅 (SiC) 功率晶体管的p型掺杂的主要注入物质。由于没有合适的铝气态掺杂剂源可用于离子注入，最常见的方法是通过在电弧室内安装固态铝靶来产生铝离子。然后使用氩气和/或含氟化物气体通过物理和化学机制使固体靶发生反应。在这里，我们检查氧化铝 (Al ₂ O ₃ ) 和氮化铝 (AlN) 靶材并结合不同的辅助气体来评估 Al ⁺植入性能。测试的气体包括三氟化硼（BF ₃）、三氟化磷（PF ₃）以及其他氟化物气体及其混合物。表征的性能因素包括铝束电流、束光谱和各种选项中的每一个的源条件。这项工作最后提出了关于铝植入物应用的最佳解决方案的建议。

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