当前位置：
X-MOL 学术
›
ACS Appl. Mater. Interfaces
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-12-09 , DOI: 10.1021/acsami.2c17495 Tingting Guo 1 , Xiufeng Song 1 , Pengfei Wei 1 , Jing Li 1 , Yuewen Gao 1 , Zhongzhou Cheng 1 , Wenhan Zhou 1 , Yu Gu 1 , Xiang Chen 1 , Haibo Zeng 1 , Shengli Zhang 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-12-09 , DOI: 10.1021/acsami.2c17495 Tingting Guo 1 , Xiufeng Song 1 , Pengfei Wei 1 , Jing Li 1 , Yuewen Gao 1 , Zhongzhou Cheng 1 , Wenhan Zhou 1 , Yu Gu 1 , Xiang Chen 1 , Haibo Zeng 1 , Shengli Zhang 1
Affiliation
|
Emerging two-dimensional narrow band gap materials with tunable band gaps and unique electrical and optical properties have shown tremendous potential in broadband photodetection. Nevertheless, large dark currents severely hinder the performance of photodetectors. Here, a MoS2/Ta2NiSe5 van der Waals heterostructure device was successfully fabricated with a high rectification ratio of ∼104 and an ultralow reverse bias current of the pA level. Excitingly, the charge transfer and the generation of the built-in electric field of heterostructures have been proved by theory and experiment, which effectively suppress dark currents. The dark current of the heterostructure reduces by nearly 104 compared with the pure Ta2NiSe5 photodetector at Vds = 1 V. The MoS2/Ta2NiSe5 device exhibits excellent photoelectric performance with the maximum responsivity of 515.6 A W–1 and 0.7 A W–1 at the wavelengths of 532 and 1064 nm under forward bias, respectively. In addition, the specific detectivity is up to 3.1 × 1013 Jones (532 nm) and 2.4 × 109 Jones (1064 nm). Significantly, the device presents an ultra-high gain of 6 × 107 and an exceptional external quantum efficiency of 1.2 × 105% under 532 nm laser irradiation. The results reveal that the MoS2/Ta2NiSe5 heterostructure provides an essential platform for the development and application of high-performance broadband optoelectronic devices.
中文翻译：
具有电荷转移和抑制暗电流功能的高增益 MoS2/Ta2NiSe5 异质结光电探测器
具有可调带隙和独特的电学和光学性质的新兴二维窄带隙材料在宽带光电检测中显示出巨大的潜力。然而，大的暗电流严重阻碍了光电探测器的性能。在这里，成功地制造了MoS 2 /Ta 2 NiSe 5范德华异质结构器件，具有~ 10 4的高整流比和pA级的超低反向偏置电流。令人兴奋的是，异质结构的电荷转移和内建电场的产生已被理论和实验证明，可有效抑制暗电流。异质结构暗电流降低近10 4与V ds = 1 V时的纯 Ta 2 NiSe 5光电探测器相比。MoS 2 /Ta 2 NiSe 5器件表现出优异的光电性能，在532 和 1064 波长下的最大响应率为 515.6 AW –1和 0.7 AW –1分别在正向偏压下 nm。此外，比检测高达3.1×10 13琼斯（532 nm）和2.4×10 9琼斯（1064 nm）。值得注意的是，该器件具有 6 × 10 7的超高增益和 1.2 × 10 5的出色外量子效率% 在 532 nm 激光照射下。结果表明，MoS 2 /Ta 2 NiSe 5异质结构为高性能宽带光电器件的开发和应用提供了必要的平台。
更新日期：2022-12-09
中文翻译：
具有电荷转移和抑制暗电流功能的高增益 MoS2/Ta2NiSe5 异质结光电探测器
具有可调带隙和独特的电学和光学性质的新兴二维窄带隙材料在宽带光电检测中显示出巨大的潜力。然而，大的暗电流严重阻碍了光电探测器的性能。在这里，成功地制造了MoS 2 /Ta 2 NiSe 5范德华异质结构器件，具有~ 10 4的高整流比和pA级的超低反向偏置电流。令人兴奋的是，异质结构的电荷转移和内建电场的产生已被理论和实验证明，可有效抑制暗电流。异质结构暗电流降低近10 4与V ds = 1 V时的纯 Ta 2 NiSe 5光电探测器相比。MoS 2 /Ta 2 NiSe 5器件表现出优异的光电性能，在532 和 1064 波长下的最大响应率为 515.6 AW –1和 0.7 AW –1分别在正向偏压下 nm。此外，比检测高达3.1×10 13琼斯（532 nm）和2.4×10 9琼斯（1064 nm）。值得注意的是，该器件具有 6 × 10 7的超高增益和 1.2 × 10 5的出色外量子效率% 在 532 nm 激光照射下。结果表明，MoS 2 /Ta 2 NiSe 5异质结构为高性能宽带光电器件的开发和应用提供了必要的平台。
京公网安备 11010802027423号