铁电体 Ca:HfO2 的低毒化学溶液沉积,Journal of Materials Chemistry C

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铁电体 Ca:HfO2 的低毒化学溶液沉积
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2022-12-07 , DOI: 10.1039/d2tc04182k
Miguel Badillo _{1,

2} , Sepide Taleb ₁ , Taraneh Mokabber ₁ , Jan Rieck ₂ , Rebeca Castanedo ₃ , Gerardo Torres ₃ , Beatriz Noheda ₂ , Mónica Acuautla ₁

Affiliation

迄今为止，已经报道了一些用于制备铁电HfO _{2薄膜的化学溶液路线。}他们中的大多数使用被认为难以处理、不稳定、有毒、通常对环境不友好和/或不适合大规模工业过程的前体、溶剂或添加剂。在这项工作中，我们提出了一种新的有效化学途径来制备铁电掺杂的 HfO ₂薄膜。该溶液由简单、稳定且可用的前体制备，在开放大气中处理，不需要限制性加工条件。我们使用 5 at% Ca 作为 HfO 2 的掺杂剂，_以针对 54 和 90 nm 厚的 Ca:HfO ₂诱导 9.3 和 11.1 μC cm ^{-2的最大残余极化}电影，分别。电流-电场环路显示出强烈而独特的铁电开关峰，相应的铁电环路显示出极好的饱和度，这说明器件质量好，漏电少。_{通过在Ar:O 2}气氛中不同温度和时间的快速热退火，实现了Ca:HfO ₂薄膜中铁电性的结晶和唤醒。与薄膜相比，较厚的薄膜在较短的退火时间内表现出最高的残余极化，从而证明需要精确控制热处理。厚度为50 nm的Ca:HfO ₂薄膜在泄漏和保留之间表现出良好的平衡，将铁电响应保持在10 ^5以上周期为 1 kHz。开发的前体溶液有望用于喷涂和喷墨印刷技术。

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Low-toxicity chemical solution deposition of ferroelectric Ca:HfO2

So far, a few chemical solution routes for the fabrication of ferroelectric HfO₂ films have been reported. Most of them employ precursors, solvents or additives that are considered difficult to handle, unstable, toxic, generally unfriendly with the environment and/or unsuitable for large scale industrial processes. In this work, we present a new effective chemical route for the preparation of ferroelectric doped-HfO₂ films. The solution is prepared from simple, stable, and available precursors, handled in an open atmosphere and requires no restrictive processing conditions. We used 5 at% Ca as the dopant of HfO₂ to induce a maximum remnant polarization of 9.3 and 11.1 μC cm⁻² for 54 and 90 nm thick Ca:HfO₂ films, respectively. The current-electric field loops show intense and distinctive ferroelectric switching peaks and the corresponding ferroelectric loops show excellent saturation, which speaks of good device quality with low leakage. Crystallization and the wake-up of ferroelectricity in Ca:HfO₂ films were achieved by means of rapid thermal annealing at different temperatures and times in an Ar:O₂ atmosphere. In comparison to thin films, thicker ones exhibited the highest remnant polarization at shorter annealing times, thus evidencing the need for precise control of thermal processing. The Ca:HfO₂ films with a thickness of 50 nm displayed a good balance between leakage and retention, maintaining the ferroelectric response above 10⁵ cycles at 1 kHz. The developed precursor solution is promising for its use in spray-coating and ink-jet printing techniques.

更新日期：2022-12-07

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