This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18- μm\mu \text{m} CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality ( QQ ) factor. The first inductor is two halves shunted octagonal loops using the top layer (M6) and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers M5−2\text{M}_{\mathrm {5-2}} and used in current-reuse (CR) VCO. The M6 inductor improves the QQ -factor by more than 25%over one loop inductor in the frequency band of interest, while the M5−2\text{M}_{\mathrm {5-2}} inductor uses four shunt layers to boost the QQ -factor by 28% in KK -band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of −112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of −188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of −107 dBc/Hz at 1 MHz and FoM −185.8 dBc/Hz.

中文翻译：

---

采用 0.18μm CMOS 技术的高品质因数两个正交电感器的双频段 VCO


这项工作通过提出在 0.18μm\mu \text{m} CMOS 中正交定位的电感器，引入了一种用于设计低相位噪声 (PN) 双频带压控振荡器 (VCO) 的新拓扑。电感器使用五个金属层实现，保持最低层为空，以最大限度地提高质量 (QQ) 系数。第一个电感器是使用顶层 (M6) 的两半分流八角形环路，并用于交叉耦合 VCO，而第二个电感器则由使用下面四层 M5−2\text{M} 的四个 C 形分流电感器形成_{\mathrm {5-2}} 并用于当前重用（CR）VCO。与感兴趣频段内的一个环路电感器相比，M6 电感器将 QQ 因子提高了 25% 以上，而 M5−2\text{M}_{\mathrm {5-2}} 电感器使用四个分流层来与单层电感器相比，KK 频段的 QQ 系数提高了 28%。 VCO 振荡频率为 22.36 至 23.4 GHz，1 MHz 时 PN 为 -112.4 dBc/Hz，品质因数 (FoM) 为 -188.8 dBc/Hz，而 CR VCO 的调谐范围为 23.8 至 25.7 GHz，PN 为 - 1 MHz 时为 107 dBc/Hz，FoM -185.8 dBc/Hz。