This letter presents a power amplifier (PA) design and network synthesis approach to achieve wideband and efficient performance with a very compact circuit size. A design method is presented in detail to convert a canonical filter-based high-order matching network to the proposed matching configuration with transistor parasitic and packaged elements absorption, and a compact passive network footprint. As a proof of concept, a prototype GaN HEMT PA is implemented. Starting from a fourth-order output network filter, the inductances and capacitance of the filter elements are re-organized to model, and thus absorb the output parasitics of the transistor, leading to a compact footprint with only four transmission lines. The measured results show that the prototype PA achieves an output power of 41.9–44.3 dBm and a 55%–74% drain efficiency, over a record-high decade bandwidth (0.35–3.55 GHz).

中文翻译：

---

具有高效率和十倍频宽的紧凑型 GaN 功率放大器的设计

这封信介绍了一种功率放大器 (PA) 设计和网络综合方法，以非常紧凑的电路尺寸实现宽带和高效性能。详细介绍了一种设计方法，可将基于规范滤波器的高阶匹配网络转换为建议的具有晶体管寄生和封装元件吸收的匹配配置，以及紧凑的无源网络占位面积。作为概念验证，实施了原型 GaN HEMT PA。从四阶输出网络滤波器开始，滤波器元件的电感和电容被重新组织以进行建模，从而吸收晶体管的输出寄生效应，从而实现只有四条传输线的紧凑封装。测量结果表明，原型 PA 实现了 41.9–44.3 dBm 的输出功率和 55%–74% 的漏极效率，