In this letter, a 10–43-GHz low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is designed in a commercial 0.15- μm\mu \text{m} GaAs E-mode pseudomorphic high electron mobility transistor (pHEMT) technology. In the proposed LNA circuit, a novel coupled-line (CL)-based positive feedback structure is employed with the bandpass characteristic. By carefully tuning its coupling factor and arm length, the center frequency fcf_{c} and the intensity of the feedback can be controlled, respectively. Subsequently, targeting fcf_{c} at the higher cutting edge of the working band leads to compensated gain roll-off and extended bandwidth. Incorporating three-stage common-source (CS) architectures, an LNA prototype is fabricated with a size of 1.05 mm2 including pads. Under 2-V voltage drain drain (VDD), good performance is obtained, including 24.6-dB peak gain with 3-dB bandwidth of 33 GHz, 2.4–3.0-dB noise figure (NF), 54.5 ± 13.8-ps group delay, and 12.3/21.5-dBm best output power at 1 dB gain compression (OP1dB)/output third order intercept point (OIP3). The total dc power is 110 mW.

中文翻译：

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采用 0.15μm GaAs pHEMT 技术中耦合线反馈的宽带 10'43-GHz 高增益 LNA MMIC


在这封信中，10–43 GHz 低噪声放大器 (LNA) 单片微波集成电路 (MMIC) 是在商用 0.15-μm\mu \text{m} GaAs E 模式赝晶高电子迁移率晶体管 (pHEMT) 中设计的。 ） 技术。在所提出的 LNA 电路中，采用了一种新颖的基于耦合线 (CL) 的正反馈结构，具有带通特性。通过仔细调整其耦合因子和臂长，可以分别控制中心频率 fcf_{c} 和反馈强度。随后，将 fcf_{c} 定位在工作频带的较高前沿会导致补偿增益滚降和扩展带宽。 LNA 原型采用三级共源 (CS) 架构，其尺寸为 1.05 mm2（包括焊盘）。在 2V 电压漏极 (VDD) 下，可获得良好的性能，包括 33 GHz 3dB 带宽下的 24.6dB 峰值增益、2.4–3.0dB 噪声系数 (NF)、54.5 ± 13.8ps 群延迟、 1 dB 增益压缩 (OP1dB)/输出三阶截取点 (OIP3) 时的最佳输出功率为 12.3/21.5 dBm。总直流功率为 110 mW。